RT1E040RP
Pch -30V -4A Power MOSFET
lOutline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
lFeatures
1) Low on - resistance.
-30V
45mW
-4A
1.25W
(8)
TSST8
(1)
(2)
(3)
(4)
(7)
(6)
(5)
lInner
circuit
(1)
(2)
(3)
(4)
Drain
Drain
Drain
Gate
(5)
(6)
(7)
(8)
Source
Drain
Drain
Drain
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSST8).
4) Pb-free lead plating ; RoHS compliant
*1
ESD PROTECTION DIODE
*2
BODY DIODE
lPackaging
specifications
Packaging
lApplication
DC/DC converters
Type
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute
maximum ratings(T
a
= 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D *1
I
D,pulse
V
GSS
P
D *3
P
D *4
T
j
T
stg
*2
Taping
180
8
3,000
TR
UG
Value
-30
4
16
20
1.25
0.55
150
-55
to
+150
Unit
V
A
A
V
W
W
°C
°C
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.09 - Rev.B
RT1E040RP
lThermal
resistance
Parameter
Symbol
R
thJA *3
R
thJA *4
Values
Min.
-
-
Typ.
-
-
Data Sheet
Max.
100
227
Unit
°C/W
°C/W
Thermal resistance, junction - ambient
lElectrical
characteristics(T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
-30
Typ.
-
Max.
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
=
-1mA
V
ΔV
(BR)DSS
I
D
=
-1mA
ΔT
j
referenced to 25°C
I
DSS
I
GSS
V
GS (th)
ΔV
(GS)th
ΔT
j
V
DS
=
-30V,
V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
=
-10V,
I
D
=
-1mA
I
D
=
-1mA
referenced to 25°C
V
GS
=
-10V,
I
D
=
-4A
-
-
-
-1
-
-
-
-
-
-
2.7
-25
-
-
-
3.9
32
45
52
47
13
7.0
-
-1
10
-2.5
-
45
63
72
66
-
-
mV/°C
mA
mA
V
mV/°C
Static drain - source
on - state resistance
R
DS(on)
*5
V
GS
=
-4.5V,
I
D
=
-2A
V
GS
=
-4.0V,
I
D
=
-2A
V
GS
=
-10V,
I
D
=
-4A,
T
j
=125°C
mW
Gate input resistannce
Transconductance
R
G
g
fs *5
f = 1MHz, open drain
V
DS
=
-10V,
I
D
=
-4A
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw
10ms, Duty cycle
1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (20×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.09 - Rev.B
RT1E040RP
lElectrical
characteristics(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on) *5
t
r *5
t
d(off)
t
f *5
*5
Data Sheet
Conditions
V
GS
= 0V
V
DS
=
-10V
f = 1MHz
V
DD
⋍
-15V,
V
GS
=
-10V
Values
Min.
-
-
-
-
-
-
-
Typ.
1000
150
130
15
30
85
45
Max.
-
-
-
-
-
-
-
Unit
pF
I
D
=
-2A
R
L
= 7.5W
R
G
= 10W
ns
lGate
Charge characteristics(T
a
= 25°C)
Parameter
Symbol
Conditions
V
DD
⋍
-15V,
I
D
=
-9A
V
GS
=
-5V
V
DD
⋍
-15V,
I
D
=
-4A
V
GS
=
-10V
V
DD
⋍
-15V,
I
D
=
-4A
V
GS
=
-5V
Values
Min.
-
Typ.
10.5
Max.
-
Unit
Total gate charge
Q
g *5
-
-
-
20
3.0
3.3
-
-
-
nC
Gate - Source charge
Gate - Drain charge
Q
gs *5
Q
gd *5
lBody
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
Symbol
Conditions
Values
Min.
-
-
Typ.
-
-
Max.
-1
-1.2
Unit
I
S
*1
T
a
= 25°C
V
GS
= 0V, I
s
=
-4A
A
V
V
SD
*5
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© 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.09 - Rev.B
RT1E040RP
lElectrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
Operation in this area
is limited by R
DS
(on)
(V
GS
=
-10V)
Power Dissipation : P
D
/P
D
max. [%]
100
10
80
60
40
20
0
P
W
= 100ms
Drain Current : -I
D
[A]
1
P
W
= 1ms
P
W
= 10ms
DC Operation
0.1
0
50
100
150
200
0.01
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.1
1
10
100
Junction Temperature : Tj [°C]
Drain - Source Voltage : -V
DS
[V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
10
T
a
=25ºC
Single Pulse
1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
Rth(ch-a)=100ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm
×
30mm
×
0.8mm)
Fig.4 Single Pulse Maxmum Power
dissipation
1000
T
a
=25ºC
Single Pulse
Peak Transient Power : P(W)
100
0.1
10
0.01
0.001
0.0001
0.01
1
100
1
0.0001
0.01
1
100
Pulse Width : P
W
[s]
Pulse Width : P
W
[s]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/11
2012.09 - Rev.B
RT1E040RP
lElectrical
characteristic curves
Data Sheet
Fig.5 Typical Output Characteristics(I)
4
V
GS
=
-10V
3
V
GS
=
-4.5V
T
a
=25ºC
Pulsed
3
4
Fig.6 Typical Output Characteristics(II)
V
GS
=
-2.8V
T
a
=25ºC
Pulsed
Drain Current : -I
D
[A]
Drain Current : -I
D
[A]
V
GS
=
-4.0V
V
GS
=
-2.8V
V
GS
=
-10V
V
GS
=
-4.5V
V
GS
=
-4.0V
V
GS
=
-3.0V
2
2
1
V
GS
=
-2.5V
0
1
V
GS
=
-2.5V
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Drain - Source Voltage : -V
DS
[V]
Drain - Source Voltage : -V
DS
[V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : -V
(BR)DSS
[V]
60
V
GS
= 0V
I
D
=
-1mA
Pulsed
40
Fig.8 Typical Transfer Characteristics
100
V
DS
=
-10V
Pulsed
10
Drain Current : -I
D
[A]
1
0.1
T
a
= 125ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
-25ºC
20
0.01
0
-50
0
50
100
150
0.001
0
1
2
3
4
Junction Temperature : T
j
[
°C
]
Gate - Source Voltage : -V
GS
[V]
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© 2012 ROHM Co., Ltd. All rights reserved.
5/11
2012.09 - Rev.B
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