Si9165
Vishay Siliconix
High Frequency 600-mA Synchronous Buck/Boost Converter
FEATURES
D
D
D
D
Voltage Mode Control
Fully Integrated MOSFET Switches
2.7-V to 6-V Input Voltage Range
Programmable PWM/PSM Control
−
Up to 600-mA Output Current @ 3.3 V in PWM
−
Up to 2-MHz Adjustable Switching Frequency in PWM
−
Less than 200-mA Quiescent Current in PSM
D
D
D
D
Integrated UVLO and POR
Integrated Soft-Start
Synchronization
Shutdown Current <1
mA
DESCRIPTION
The Si9165 provides fully integrated synchronous buck or
boost converter solution for the latest one cell Lithium Ion
cellular phones. Capable of delivering up to 600 mA of output
current at +3.3 V, the Si9165 provides ample power for various
baseband circuits as well as for some PAs. It combines the
2-MHz switching controller with fully integrated high-frequency
MOSFETs to deliver the smallest and most efficient converter
available today. The 2-MHz switching frequency reduces the
inductor height to new level of 2 mm and minimizes the output
capacitance requirement to less than 10
mF
with peak-to-peak
output ripple as low as 10 mV. Combined with low-gate charge
high-frequency MOSFETs, the Si9165 delivers efficiency up to
95%. The programmable pulse skipping mode maintains this
high efficiency even during the standby and idle modes to
increase overall battery life and talktime. In order to extract the
last ounce of power from the battery, the Si9165 is designed
with 100% duty cycle control for buck mode. With 100% duty
cycle, the Si9165 operates like a saturated linear regulator to
deliver the highest potential output voltage for longer talktime.
The Si9165 is available in both standard and lead (Pb)-free
TSSOP-20 pin packages. In order to satisfy the stringent
ambient temperature requirements, the Si9165 is rated to
handle the industrial temperature range of
−25_C
to 85_C.
STANDARD APPLICATION CIRCUITS
V
IN
2.7
X
6 V
V
OUT
0
X
600 mA
V
IN
2.7
X
6 V
V
DD
MODE
COIL
V
O
V
S
V
IN/OUT
FB
SHUTDOWN
PWM/PSM
SYNC
PGND
COMP
R
OSC
REF
GND
SHUTDOWN
PWM/PSM
SYNC PGND
V
DD
MODE
V
S
V
IN/OUT
V
O
COIL
PGND
FB
COMP
R
OSC
REF
GND
V
OUT
0
X
600 mA
Boost Configuration
Document Number: 70845
S-40693—Rev. C, 19-Apr-04
Buck Configuration
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1
Si9165
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to GND
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 V
MODE, PWM/PSM, SYNC, SD,
V
REF
, R
OSC
COMP, FB . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.3
V to V
DD
+0.3 V
V
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.3
V to V
S
+0.3 V
PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"0.3
V
Voltages Referenced to PGND
V
S
, V
IN/OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 V
COIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−0.4
V to V
IN/OUT
+0.4 V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65
to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C
Power Dissipation (Package)
a
20-Pin TSSOP (Q Suffix)
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W
Thermal Impedance (Θ
JA
)
20-Pin TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125_C/W
Notes
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 8.0 mW/
_
C above 25
_
C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Voltages Referenced to GND
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7 V to 6 V
MODE, PWM/PSM, SYNC, SD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V
DD
Voltages Referenced to PGND
V
S
, V
IN/OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7 V to 6 V
F
osc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 kHz to 2 MHz
R
osc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 kW to 300 kW
V
REF
Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1
mF
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Reference
Output Voltage
Load Regulation
Power Supply Rejection
V
REF
DV
REF
P
SRR
I
REF
= 0
T
A
= 25°C, I
REF
= 0
V
DD
= 3.3 V,
−500
µA
< I
REF
<0
1.268
1.280
1.3
1.3
3
60
1.332
1.320
V
mV
dB
Limits
Min
a
Typ
b
Max
a
Unit
Symbol
2.7 V < V
DD
< 6V,
V
IN/OUT
= 3.3 V, V
S
= 3.3 V
UVLO
Under Voltage Lockout (turn-on)
Hysteresis
V
UVLOLH
V
HYS
V
UVLOLH
−
V
UVLOHL
2.3
2.4
0.1
2.5
V
Soft-Start Time
SS time
tss
6
ms
Mode
Logic High
Logic Low
Input Current
V
IH
V
IL
I
L
−1.0
0.7 V
DD
0.3 V
DD
1.0
V
mA
SD, SYNC, PWM/PSM
Logic High
Logic Low
Input Current
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V
IH
V
IL
I
L
−1.0
2.4
0.8
1.0
V
mA
2
Document Number: 70845
S-40693—Rev. C, 19-Apr-04
Si9165
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Oscillator
Maximum Frequency
Accuracy
Max Duty Cycle (Buck, Non LDO Mode)
Max Duty Cycle (Boost)
SYNC Range
SYNC Low Pulse Width
SYNC High Pulse Width
SYNC t
r
, t
f
D
MAX
F
SYNC
/F
OSC
F
MAX
Nominal 1.60 MHz, R
OSC
= 30 kW
Fsw = 2 MHz
2
−20
75
50
1.2
50
50
50
ns
85
65
1.5
20
%
MHz
Limits
Min
a
Typ
b
Max
a
Unit
Symbol
2.7 V < V
DD
< 6V,
V
IN/OUT
= 3.3 V, V
S
= 3.3 V
Error Amplifier
Input Bias Current
Open Loop Voltage Gain
FB Threshold
Unity Gain BW
Output Current
I
BIAS
A
VOL
V
FB
BW
I
EA
Source (V
FB
= 1.05 V), V
COMP
= 0.75 V
Sink (V
FB
= 1.55 V), V
COMP
= 0.75 V
1
T
A
= 25_C
V
FB
= 1.5 V
−1
50
1.270
1.258
60
1.30
1.30
2
−3
3
−1
1.330
1.342
1
mA
dB
V
MHz
mA
Output Current
Output Current (PWM)
Boost Mode
c
Buck Mode
d
Boost Mode
c
Buck Mode
d
r
DS( )
DS(on)
I
OUT
V
IN
v
V
OUT
= 2.7 to 5.0 V
V
IN
w
V
OUT
= 2.7 to 6.0 V
V
IN
= 3.3 V, V
OUT
= 3.6 V
V
IN
= 3.6 V, V
OUT
= 2.7 V
V
S
w
3 3 V
3.3
600
600
150
150
130
160
300
330
mW
mA
Output Current (PSM)
r
DS(on)
N-channel
r
DS(on)
P-channel
Over temperature protection
Trip Point
Hysteresis
Rising Temperature
165
25
°C
Supply Current
Normal Mode
PSM Mode
Shutdown Mode
I
DD
V
DD
= 3.3 V, F
OSC
= 2 MHz
V
DD
= 3.3 V
V
DD
= 3.3 V, SD = 0 V
500
180
750
250
1
mA
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. V
IN
= V
DD,
V
OUT
= V
IN/OUT
= V
S
= V
O
, L = 1.5
mH
d. V
IN
= V
DD
= V
S
= V
IN/OUT
, V
OUT
= V
O
, L = 1.5
mH
Document Number: 70845
S-40693—Rev. C, 19-Apr-04
www.vishay.com
3
Si9165
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
1.310
V
REF
vs. V
DD
1.32
V
REF
vs. Temperature
1.305
V
REF
(V)
V
REF
(V)
2.5
3.0
3.5
4.0
V
DD
−
(V)
4.5
5.0
5.5
6.0
1.31
1.300
1.30
1.295
1.29
1.290
2.0
1.28
−50
0
50
Temperature (_C)
100
150
2.00
1.95
Frequency vs. Temperature
10000
Frequency vs. R
OSC
R
OSC
= 25 kW
Frequency (MHz)
Frequency (kHz)
1.90
1.85
1.80
1.75
1.70
−100
1000
100
−50
0
50
100
150
10
100
R
OSC
(kW)
1000
Temperature (_C)
100
95
90
Buck Mode Efficiency, V
O
= 2.7 V
95
PSM−3 V
Boost Mode Efficiency, V
O
= 3.6 V
PWM−2.7 V
PWM−3.3 V
90
85
Efficiency (%)
PWM−3 V
PWM−3.6 V
PSM−3.3 V
PSM−3.6 V
Efficiency (%)
85
PSM−4.2 V
80
PSM−2.7 V
80
75
70
65
60
1
75
70
65
60
PWM−4.2 V
10
100
1000
1
10
100
1000
Load Current (mA)
Load Current (mA)
Document Number: 70845
S-40693—Rev. C, 19-Apr-04
www.vishay.com
4
Si9165
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
PWM Supply Current
800
700
200
600
I
DD
(mA)
500
400
100
300
200
2
3
4
5
6
7
V
DD
−
(V)
50
2
3
4
5
V
DD
−
(V)
6
7
I
DD
(mA)
150
250
PSM Supply Current
PIN CONFIGURATION AND ORDERING INFORMATION
TSSOP-20
NC
SD
PWM/PSM
V
IN/OUT
V
IN/OUT
V
IN/OUT
SYNC
GND
V
REF
FB
1
20
2
19
3
18
4
17
5
16
Si9165BQ
6
15
7
14
8
13
9
12
10
11
Top View
COIL
COIL
MODE
PGND
PGND
V
S
V
O
V
DD
R
OSC
COMP
Ordering Information
Part Number
Si9165BQ-T1
Si9165BQ-T1—E3
Temperature Range
−25
to 85_C
25
Package
Tape and Reel
Eval Kit
Si9165DB
Temperature Range
−25
to 85_C
Board Type
Surface Mount
PIN DESCRIPTION
Pin
1
2
3
4, 5, 6
7
8
9
10
11
12
13
14
15
16, 17
18
19, 20
Symbol
N/C
SD
PWM/PSM
V
IN/OUT
SYNC
GND
V
REF
FB
COMP
Rosc
V
DD
V
O
V
S
PGND
MODE
COIL
Not Used
Description
Shuts down the IC completely and decreases current consumed by the IC to <1
mA.
Logic high = PWM mode, logic low = PSM mode. In PSM mode, synchronous rectification is disabled.
Input node for buck mode and output node for boost mode.
Externally controlled synchronization signal. Logic high to low transition forces the clock synchronization.
If not used, the
pin must be connected to V
DD
, or logic high.
Low power controller ground
1.3-V reference. Decoupled with 0.1-mF capacitor.
Output voltage feedback connected to the inverting input of an error amplifier.
Error amplifier output for external compensation network.
External resistor to determine the switching frequency.
Input supply voltage for the analog circuitry. Input voltage range is 2.7 V to 6 V.
Direct output voltage sensing to control peak inductor current in PSM mode.
Supply voltage for the internal MOSFET drive circuit.
Power ground.
Determines the converter topology. Connect to AGND for buck or V
DD
for boost.
Inductor connection node
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Document Number: 70845
S-40693—Rev. C, 19-Apr-04
5