MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 4.6 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 31 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Tube |
高度 Height | 15.65 mm |
长度 Length | 10 mm |
Transistor Type | 1 N-Channel |
宽度 Width | 4.4 mm |
Forward Transconductance - Min | 38 S |
Fall Time | 4 ns |
Pd-功率耗散 Pd - Power Dissipation | 68 W |
Rise Time | 5.2 ns |
工厂包装数量 Factory Pack Quantity | 500 |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 6.7 ns |
单位重量 Unit Weight | 0.211644 oz |
IPP055N03L-G | IPB055N03L-G | IPP055N03LGXKSA1 | |
---|---|---|---|
描述 | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 |
Product Attribute | Attribute Value | Attribute Value | - |
制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) | - |
产品种类 Product Category |
MOSFET | MOSFET | - |
RoHS | Details | Details | - |
技术 Technology |
Si | Si | - |
安装风格 Mounting Style |
Through Hole | SMD/SMT | - |
封装 / 箱体 Package / Case |
TO-220-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds - Drain-Source Breakdown Voltage | 30 V | 30 V | - |
Id - Continuous Drain Current | 50 A | 50 A | - |
Rds On - Drain-Source Resistance | 4.6 mOhms | 5.5 mOhms | - |
Vgs - Gate-Source Voltage | 20 V | 20 V | - |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C | - |
最大工作温度 Maximum Operating Temperature |
+ 175 C | + 175 C | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
系列 Packaging |
Tube | Reel | - |
高度 Height |
15.65 mm | 4.4 mm | - |
长度 Length |
10 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
宽度 Width |
4.4 mm | 9.25 mm | - |
Fall Time | 4 ns | 4 ns | - |
Pd-功率耗散 Pd - Power Dissipation |
68 W | 68 W | - |
Rise Time | 5.2 ns | 5.2 ns | - |
工厂包装数量 Factory Pack Quantity |
500 | 1000 | - |
Typical Turn-Off Delay Time | 25 ns | 25 ns | - |
Typical Turn-On Delay Time | 6.7 ns | 6.7 ns | - |
单位重量 Unit Weight |
0.211644 oz | 0.139332 oz | - |
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