TPCA8106
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPCA8106
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
6.0
±
0.3
5.0
±
0.2
Unit: mm
1.27 0.4
±
0.1
8
5
0.05 M A
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON-resistance: R
DS (ON)
= 2.9 mΩ (typ.)
(V
GS
=
−10V）
0.15
±
0.05
1
0.95
±
0.05
4
0.595
0.166
±
0.05
4
0.8
±
0.1
5
3.5
±
0.2
1.1
±
0.2
A
High forward transfer admittance: |Y
fs
| = 79S (typ.)
Low leakage current: I
DSS
=
−10
μA
(max) (V
DS
=
−30
V)
Enhancement mode: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
5.0
±
0.2
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
E
AR
T
ch
T
stg
Rating
−30
−30
±20
−40
−120
45
2.8
Unit
V
V
V
A
W
W
S
1
0.6
±
0.1
0.05 S
4.25
±
0.2
8
Pulsed (Note 1)
(Tc=25℃)
(t
=
10 s)
(Note 2a)
1,2,3: SOURCE
5,6,7,8: DRAIN
4: GATE
Drain power dissipation
Drain power dissipation
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-5Q1A
Drain power dissipation
(t
=
10 s)
(Note 2b)
1.6
W
Weight: 0.069 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
208
−40
4.5
150
−55
to 150
mJ
A
mJ
°C
°C
Circuit Configuration
8
7
6
5
Note: For Note 1 to 4, please refer to the next page.
4
1
2
3
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-01-14
TPCA8106
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
(Tc=25℃)
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2a)
Symbol
R
th (ch-c)
Max
2.78
Unit
°C/W
R
th (ch-a)
44.6
°C/W
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2b)
R
th (ch-a)
78.1
°C/W
Marking
(Note 5)
TPCA
8106
※
Part number
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
(b)
Note 3: V
DD
= −24
V, T
ch
=
25°C (initial), L
=
100
μH,
R
G
=
25
Ω,
I
AR
= −40
A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
*
Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2010-01-14
TPCA8106
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs1
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
GS
0 V
−10
V
4.7
Ω
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±20
V, V
DS
=
0 V
V
DS
= −30
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
20 V
V
DS
= −10
V, I
D
= −1
mA
V
GS
= −4
V, I
D
= −20
A
V
GS
= −10
V, I
D
= −20
A
V
DS
= −10
V, I
D
= −20
A
Min
⎯
⎯
−30
−13
−0.8
⎯
⎯
39.5
⎯
⎯
⎯
⎯
I
D
= −20A
V
OUT
R
L
=
0.75
Ω
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
5.5
2.9
79
4600
970
1500
10
20
300
750
130
12
40
Max
±100
−10
⎯
⎯
−2.0
7.8
3.7
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
pF
Unit
nA
μA
V
V
mΩ
S
V
DD
≈
−15
V
Duty
≤
1%, t
w
=
10
μs
V
DD
≈
−24
V, V
GS
= −10
V,
I
D
= −40
A
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
I
DRP
V
DSF
Test Condition
⎯
I
DR
= −40
A, V
GS
=
0 V
Min
⎯
⎯
Typ.
⎯
⎯
Max
−120
1.2
Unit
A
V
3
2010-01-14
TPCA8106
I
D
– V
DS
−50
−8
−6
−4.5
−10
−3.2
−3.4
−3.6
−4
−3
Common source
Ta
=
25°C
Pulse test
−100
−10
−6
−3.4
−3.6
−4
−4.5
I
D
– V
DS
−3.2
Common source
Ta
=
25°C
Pulse test
−3
(A)
(A)
−40
−2.8
−80
I
D
−30
−2.6
−20
−2.4
VGS
= −2.2
V
0
0
−0.2
−0.4
−0.6
−0.8
−1
I
D
−60
−2.8
Drain current
Drain current
−40
−
2.6
−2.4
VGS
= −2.2
V
−10
−20
0
0
−1
−2
−3
−4
Drain−source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
−100
V
DS
– V
GS
−0.5
I
D
(A)
−80
V
DS
(V)
Common source
VDS
= −10
V
Pulse test
−0.4
Common source
Ta
=
25°C
Pulse test
−40
Drain−source voltage
−60
−0.3
Drain current
−0.2
ID
= −40
A
−10
−20
−20
100
Ta
= −55°C
25
−0.1
0
0
−1
−2
−3
−4
0
0
−4
−8
−12
−16
−20
Gate−source voltage
V
GS
(V)
Gate−source voltage
V
GS
(V)
|Y
fs
| – I
D
1000
100
Common source
Ta
=
25°C
Pulse test
R
DS (ON)
– I
D
Forward transfer admittance
|Y
fs
| (S)
100
Ta
= −55°C
10
100
25
Drain−source ON-resistance
R
DS (ON)
(mΩ)
10
−4
VGS
= −10
V
1
1
Common source
VDS
= −10
V
Pulse test
0.1
−0.1
−1
−10
−100
0.1
−0.1
−1
−10
−100
Drain current
I
D
(A)
Drain current
I
D
(A)
4
2010-01-14
TPCA8106
R
DS (ON)
– Ta
10
−1000
I
DR
– V
DS
(A)
Common source
Pulse test
Drain-source ON-resistance
R
DS (ON)
(mΩ)
8
I
DR
ID
= −10, −20, −40
A
−100
−10
−5
−3
−1
VGS
=
0 V
6
VGS
= −4
V
4
ID
= −10, −20, −40
A
2
VGS
= −10
V
Drain reverse current
−10
−1
Common source
Ta
=
25°C
Pulse test
−0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
−80
−40
0
40
80
120
160
Ambient temperature
Ta
(
°
C)
Drain−source voltage
V
DS
(V)
Capacitance – V
DS
10000
−2
V
th
– Ta
V
th
(V)
Gate threshold voltage
−100
(pF)
Ciss
−1.6
−1.2
Capacitance
C
1000
Coss
Crss
−0.8
Common source
−0.4
VDS
= −10
V
ID
= −1mA
Pulse test
0
−80
−40
0
40
80
120
160
100
−0.1
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
−1
−10
Drain−source voltage
V
DS
(V)
Ambient temperature
Ta
(
°
C)
Dynamic input/output
characteristics
−30
V
DS
(V)
VDD =
−24V
Common source
ID
= −40
A
Ta
=
25°C
Pulse test
−30
−20
VDS
−20
Drain−source voltage
−12
−10
−6
−6
−12
VGS
VDD =
−24V
−10
0
0
40
80
120
160
200
0
Total gate charge
Q
g
(nC)
Gate−source voltage
V
GS
(V)
5
2010-01-14
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