Bi direction ESD Protection Diode
RSB6.8ZS
lApplication
ESD Protection
0.38±0.03
Data
Sheet
lDimensions
(Unit : mm)
0½0.03
0.19±0.03
lFeatures
1) Ultra small mold type.
(GMD2)
2) Bi direction.
8
0.3±0.05
0.6±0.05
0.27±0.03
0.3±0.03
3) High reliability
4) By chip-mounter, automatic
mounting is possible.
lConstruction
Silicon Epitaxial Planar Type
lAbsolute
maximum ratings
(T
a
= 25°C)
ot
Power dissipation
Junction temperature
N
Storage temperature
Operation temperature range
lElectrical
characteristics
(T
a
= 25°C)
Parameter
Zener voltage
Reverse current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
lLand
size figure
(Unit : mm)
0.31
0.23
GMD2
lTaping
specifications
(Unit : mm)
R
Parameter
Symbol
P
T
j
T
stg
T
opor
0.38
Limits
100
150
Unit
mW
°C
°C
°C
-55
to
+150
-55
to
+150
Symbol Min. Typ. Max.
V
Z
I
R
5.78
-
-
-
7.82
0.5
Unit
V
mA
I
Z
=1mA
V
R
=3.5V
1/5
or
lStructure
Conditions
ROHM : GMD2
JEDEC : SOD962
JEITA : -
dot(year week factory)
2014.04 - Rev.B
RSB6.8ZS
lElectrical
characteristic curves
Data Sheet
10
apply voltage
10
apply voltage
ZENER CURRENT : I
Z
(mA)
ZENER CURRENT : I
Z
(mA)
1
Ta= 25°C
Ta = 75°C
1
Ta= 25°C
Ta =
-25°C
0.1
0.01
6.5
ec
N
ew om
m
D
es en
ig de
ns d
f
Ta =
-25°C
0.1
0.01
7
7.5
8
6.5
7
7.5
ZENER VOLTAGE : V
Z
(V)
V
Z
-I
Z
CHARACTERISTICS(1)
ZENER VOLTAGE : V
Z
(V)
V
Z
-I
Z
CHARACTERISTICS(2)
1000
1000
100
apply voltage
apply voltage
REVERSE CURRENT : I
R
(nA)
100
10
1
REVERSE CURRENT : I
R
(nA)
Ta = 125°C
10
1
ot
R
Ta = 75°C
0.1
Ta = 75°C
0.1
N
0.01
Ta= 25°C
0.01
0.001
0.001
0
1
2
3
4
5
0
1
2
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS(1)
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS(2)
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© 2014 ROHM Co., Ltd. All rights reserved.
2/5
or
Ta = 125°C
Ta = 75°C
8
Ta = 125°C
Ta= 25°C
3
4
5
Ta = 125°C
2014.04 - Rev.B
RSB6.8ZS
lElectrical
characteristic curves
Data Sheet
100
apply voltage
100
f = 1MHz
apply voltage
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
10
1
0
ec
N
ew om
m
D
es en
ig de
ns d
f
10
1
1
2
3
4
0
1
2
3
REVERSE VOLTAGE : V
R
(V)
V
R
-C
t
CHARACTERISTICS(1)
REVERSE VOLTAGE : V
R
(V)
V
R
-C
t
CHARACTERISTICS(2)
7.5
ZENER OLTAGE : V
Z
(V)
7.4
REVERSE CURRENT : I
R
(nA)
Ta=25°C
I
Z
=1mA
n=30pcs
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
AVE : 7.32V
7.3
ot
7.2
R
AVE : 0.49nA
AVE : 7.21V
apply voltage
apply voltage
apply voltage
7.1
N
7
0.0
V
Z
DISPERSION MAP
I
R
DISPERSION MAP
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© 2014 ROHM Co., Ltd. All rights reserved.
3/5
or
4
Ta=25°C
V
R
=3.5V
n=30pcs
AVE : 0.77nA
apply voltage
2014.04 - Rev.B
RSB6.8ZS
lElectrical
characteristic curves
Data Sheet
15.0
14.0
DYNAMIC IMPEDANCE : Z
Z
(W)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
100
AVE : 10.4pF
apply voltage
ec
N
ew om
m
D
es en
ig de
ns d
f
AVE : 10.4pF
apply voltage
10
1
0.1
C
t
DISPERSION MAP
ZENER CURRENT : I
Z
(mA)
Z
Z
-I
Z
CHARACTERISTICS(1)
1000
1000
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
apply voltage
On glass- epoxy substrate
DYNAMIC IMPEDANCE : Z
Z
(W)
100
R
100
N
ot
10
1
0.1
1
10
10
0.001
0.01
0.1
ZENER CURRENT : I
Z
(mA)
Z
Z
-I
Z
CHARACTERISTICS(2)
TIME : t(s)
Rth-t CHARACTERISTICS
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© 2014 ROHM Co., Ltd. All rights reserved.
4/5
or
1
10
R
th
(j-a)
R
th
(j-c)
1
10
100
1000
Ta=25°C
f = 1MHz
V
R
=0V
n=10pcs
1000
apply voltage
2014.04 - Rev.B
RSB6.8ZS
lElectrical
characteristic curves
Data Sheet
30
apply voltage
30
No Break at 30kV
apply voltage
No Break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
AVE : 24.7kV
20
15
10
5
0
20
15
10
5
0
AVE : 3.3kV
C=200pF
R=0W
N
ot
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
AVE : 14.0kV
AVE : 3.0kV
C=150pF
R=330W
C=100pF
R=1.5kW
C=200pF
R=0W
C=150pF
R=330W
ESD DISPERSION MAP(1)
ESD DISPERSION MAP(2)
R
5/5
or
C=100pF
R=1.5kW
25
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
25
2014.04 - Rev.B
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