AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
AUIRF7738L2TR
Automotive DirectFET
®
Power MOSFET
V
(BR)DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
Q
g (typical)
40V
1.2m
1.6m
184A
129nC
S
D
G
S
S
S
S
S
D
Applicable DirectFET
®
Outline and Substrate Outline
SB
Description
SC
M2
M4
L6
DirectFET
®
ISOMETRIC
L4
L6
L8
The AUIRF7738L2 combines the latest Automotive HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging technology
to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.The DirectFET
®
package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.The DirectFET
®
package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET
®
Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET
®
packaging
platform coupled with the latest silicon technology allows the AUIRF7738L2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Base Part Number
AUIRF7738L2
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7738L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(Tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
±20
184
130
35
315
736
94
3.3
134
538
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-5
AUIRF7738L2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Can
R
J-Can
R
J-PCB
Junction-to-PCB Mounted
Linear Derating Factor
Typ.
–––
12.5
20
–––
–––
0.63
Max.
45
–––
–––
1.6
0.5
Units
°C/W
W/°C
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
––– 0.02 ––– V/°C
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
1.2
1.6
Static Drain-to-Source On-Resistance
R
DS(on)
m
V
GS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
Gate Threshold Voltage Coefficient
––– -8.4
––– mV/°C
V
GS(th)
/T
J
gfs
Forward Transconductance
113
–––
–––
S
R
G
Internal Gate Resistance
–––
1.0
–––
–––
–––
5.0
Drain-to-Source Leakage Current
µA
I
DSS
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Total Gate Charge
–––
129
194
Q
gs1
Gate-to-Source Charge
–––
27
–––
Q
gs2
Gate-to-Source Charge
–––
10
–––
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
45
–––
Q
godr
Gate Charge Overdrive
–––
47
–––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
–––
55
–––
Q
oss
Output Charge
–––
54
–––
nC
t
d(on)
Turn-On Delay Time
–––
21
–––
t
r
Rise Time
–––
77
–––
ns
t
d(off)
Turn-Off Delay Time
–––
39
–––
t
f
Fall Time
–––
38
–––
C
iss
Input Capacitance
––– 7471 –––
C
oss
Output Capacitance
––– 1640 –––
C
rss
Reverse Transfer Capacitance
–––
737
–––
pF
C
oss
Output Capacitance
––– 5936 –––
C
oss
C
oss
eff.
Output Capacitance
Effective Output Capacitance
–––
–––
1465
2261
–––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 109A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 109A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
DS
= 20V
V
GS
= 10V
I
D
= 109A
See Fig.11
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 10V
I
D
= 109A
R
G
= 1.8
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
Notes
through
are on page 3
2
2015-10-5
AUIRF7738L2TR
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
50
68
184
A
736
1.3
75
102
V
ns
nC
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 109A, V
GS
= 0V
T
J
= 25°C, I
F
= 109A, V
DD
= 20V
dv/dt = 100A/µs
D
G
S
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
®
Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.022mH, R
G
= 50, I
AS
= 109A.
Pulse width
400µs; duty cycle
2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
3
2015-10-5
10000
10000
AUIRF7738L2TR
60µs
PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60µs
PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
1000
BOTTOM
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
100
4.5V
10
4.5V
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
ID = 109A
3
Fig. 2
Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance (
m)
RDS(on), Drain-to -Source On Resistance (m
)
4
2.0
Vgs = 10V
1.8
1.6
1.4
1.2
1.0
0.8
5
30
55
80
105 130 155 180 205
ID, Drain Current (A)
T J = 25°C
T J = 125°C
2
T J = 125°C
1
T J = 25°C
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig. 3
Typical On-Resistance vs. Gate Voltage
1000
VDS = 25V
60µs
PULSE WIDTH
Fig. 4
Typical On-Resistance vs. Drain Current
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 109A
VGS = 10V
100
T J = -40°C
10
TJ = 25°C
TJ = 175°C
1
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
4
Fig 6.
Normalized On-Resistance vs. Temperature
2015-10-5
5.5
VGS(th) , Gate threshold Voltage (V)
AUIRF7738L2TR
1000
T J = -40°C
ISD, Reverse Drain Current (A)
4.5
TJ = 25°C
TJ = 175°C
100
3.5
10
2.5
ID = 1.0A
ID = 10mA
ID = 1.0mA
ID = 250µA
1.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig. 7
Typical Threshold Voltage vs.
Junction Temperature
400
Gfs, Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = Cds + Cgd
350
300
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
ID ,Drain-to-Source Current (A)
V DS = 10V
380µs PULSE WIDTH
T J = 175°C
T J = 25°C
C, Capacitance (pF)
10000
C iss
Coss
1000
Crss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 9.
Typical Forward Trans conductance vs. Drain Current
14
ID = 109A
VGS, Gate-to-Source Voltage (V)
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage
200
12
10
8
6
4
2
0
0
25
50
VDS = 32V
VDS = 20V
180
160
ID, Drain Current (A)
VDS= 8V
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (°C)
Fig 11.
Typical Gate Charge vs.
Gate-to-Source Voltage
5
Fig 12.
Maximum Drain Current vs. Case Temperature
2015-10-5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
