Si4453DY
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
R
DS(on)
(Ω)
0.0065 at V
GS
= - 4.5 V
0.00775 at V
GS
= - 2.5 V
0.01025 at V
GS
= - 1.8 V
I
D
(A)
- 14
- 13
- 12
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Battery Switch
S
SO-8
S
S
S
G
1
2
3
4
Top View
D
P-Channel MOSFET
8
7
6
5
D
D
G
D
D
Ordering Information:
Si4453DY-T1-E3
(Lead (Pb)-free)
Si4453DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 2.7
3.0
1.9
- 55 to 150
- 14
- 11.5
- 50
- 1.36
1.5
0.95
W
°C
10 s
- 12
±8
- 10
-8
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
33
70
16
Maximum
42
84
21
°C/W
Unit
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
1
Si4453DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
t
rr
I
F
= - 2.1 A, dI/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= - 6 V, V
GS
= - 5 V, I
D
= - 14 A
110
15
27.5
110
235
410
285
3.6
180
270
170
350
620
430
Ω
ns
ns
165
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 600 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 14 A
V
GS
= - 2.5 V, I
D
= - 13 A
V
GS
= - 1.8 V, I
D
= - 12 A
V
DS
= - 6 V, I
D
= - 14 A
I
S
= - 2.7 A, V
GS
= 0 V
- 30
0.0051
0.0062
0.0082
80
- 0.6
- 1.1
0.0065
0.00775
0.01025
S
V
Ω
- 0.4
- 0.9
± 100
-1
- 10
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
50
V
GS
= 5 thru 2 V
40
40
I
D
- Drain Current (A)
50
I
D
- Drain Current (A)
30
1.5 V
30
20
20
T
C
= 125
°C
10
25
°C
- 5 5
°C
10
0
0
1
2
3
4
5
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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2
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
Si4453DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
0.015
12000
C
iss
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.012
V
GS
= 1.8 V
0.009
V
GS
= 2.5 V
0.006
V
GS
= 4.5 V
0.003
10000
8000
6000
C
oss
C
rss
4000
2000
0.000
0
8
16
24
32
40
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 14 A
1.4
R
DS(on)
- On-Resistance
(Normalized)
1.6
V
GS
= 4.5 V
I
D
= 14 A
Capacitance
5
4
1.2
3
1.0
2
1
0.8
0
0
26
52
78
104
130
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
0.030
On-Resistance vs. Junction Temperature
30
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
0.024
0.018
I
D
= 14 A
T
J
= 25
°C
1
0.012
0.006
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0.0
1.6
3.2
4.8
6.4
8.0
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
3
Si4453DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
0.6
100
0.4
V
GS(th)
Variance (V)
I
D
= 600
µA
0.2
Power (W)
80
60
0.0
40
- 0.2
20
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1
1s
10 s
0.1
T
C
= 25 °C
Single Pulse
DC
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70
°C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
Si4453DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72175.
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
www.vishay.com
5
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