(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
Operating Junction and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
6.0
I
FRM
12.0
I
FSM
60
T
J
, T
stg
−65 to +175
°C
A
A
Value
600
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 1)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
Symbol
R
qJC
R
qJA
Value
4.2
95.7
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage
(Note 2)
Instantaneous Reverse Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
Forward Recovery Time
Forward Voltage Time
Test Conditions
(i
F
= 6 A, T
C
= 125°C)
(i
F
= 6 A, T
C
= 25°C)
(Rated DC Voltage, T
C
= 125°C)
(Rated DC Voltage, T
C
= 25°C)
(I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A)
(I
F
= 1 A, dI
F
/dt = −50 A/ms, V
R
= 30 V)
(I
F
= 6 A, d
IF
/d
t
= −200 A/ms, T
C
= 25°C)
Symbol
v
F
i
R
t
rr
t
rr
I
RM
Q
rr
S
t
rr
I
RM
Q
rr
S
t
fr
V
FP
Typ
1.45
2.4
35
0.035
−
−
30
2.3
37
2
45
5.5
150
0.35
−
−
Max
1.8
3.0
300
30
30
50
50
3
50
−
−
−
−
−
200
6
Unit
V
mA
ns
ns
A
nC
−
ns
A
nC
−
ns
V
(I
F
= 6 A, d
IF
/d
t
= −200 A/ms, T
C
= 125°C)
(I
F
= 6 A, d
IF
/d
t
= 120 A/ms, T
C
= 25°C)
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NHPD660, NRVHPD660
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
T
A
= 150°C
10
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
10
T
A
= 150°C
1
T
A
= 125°C
0.1
T
A
= 25°C
T
A
= −40°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
T
A
= 125°C
0.1
T
A
= 25°C
0.01
0.01
T
A
= −40°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.001
0.001
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
T
A
= −40°C
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= 175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T
A
= −40°C
0
100
200
300
400
500
600
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−11
1.E−12
0
100
200
300
400
500
600
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1.E−09
1.E−10
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Figure 4. Maximum Reverse Characteristics
DC
Square Wave
100
R
qJC
= 4.2°C/W
20
40
60
80
100
120
140
160 180
10
0
20
40
60
80
100 120 140 160 180
200
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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NHPD660, NRVHPD660
TYPICAL CHARACTERISTICS
I
PK
/I
AV
= 10
T
J
= 175°C
I
PK
/I
AV
= 5
T
rr
, REVERSE RECOVERY TIME (ns)
3.0
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
2.5
2.0
1.5
1.0
Square Wave
0.5
0
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
dc
I
PK
/I
AV
= 20
35
30
25
20
V
r
= 30 V
d
i
/d
t
= 50 A/ms
Q
rr
10
5
0
0
1
2
3
4
5
6
7
8
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
rr
35
30
25
20
15
Q
rr
, RECOVERED STORED CHARGE (ns)
15
10
5
0
Figure 7. Forward Power Dissipation
Figure 8. Typical Recovery Characteristics
100
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
10
R(t) (C/W)
1
0.1
0.01
0.001
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1
10
100
1000
Figure 9. Thermal Response
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NHPD660, NRVHPD660
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
4
C
A
B
c2
L3
1
D
2
3
DETAIL A
Z
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
L4
b2
e
b
0.005 (0.13)
M
c
C
L2
GAUGE
PLANE
H
C
L
L1
DETAIL A
ROTATED 90 CW
5
SEATING
PLANE
A1
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
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