PD - 95703
IRFPS3810PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
D
V
DSS
= 100V
R
DS(on)
= 0.009Ω
G
S
I
D
= 170A
Description
The HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
Super-247™
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
170
120
670
580
3.8
± 30
1350
100
58
2.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
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1
9/10/04
IRFPS3810PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
100
–––
–––
3.0
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.009
Ω
V
GS
= 10V, I
D
= 100A
5.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 100A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
390
I
D
= 100A
74
nC V
DS
= 80V
250
V
GS
= 10V
–––
V
DD
= 50V
–––
I
D
= 100A
ns
–––
R
G
= 1.03Ω
–––
V
GS
= 10V
D
Between lead,
5.0 –––
6mm (0.25in.)
nH
G
from package
13 –––
and center of die contact
S
6790 –––
V
GS
= 0V
2470 –––
pF
V
DS
= 25V
990 –––
ƒ = 1.0MHz, See Fig. 5
10740 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
1180 –––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
2210 –––
V
GS
= 0V, V
DS
= 0V to 80V
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
260
49
160
24
270
45
140
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 170
showing the
A
G
integral reverse
––– ––– 670
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
––– 220 330
ns
T
J
= 25°C, I
F
= 100A
––– 1640 2460 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 0.27mH
T
J
≤
175°C
max. junction temperature. (See fig. 11)
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
R
G
= 25Ω, I
AS
= 100A. (See Figure 12)
I
SD
≤
100A, di/dt
≤
350A/µs, V
DD
≤
V
(BR)DSS
,
2
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IRFPS3810PbF
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
I
D
, Drain-to-Source Current (A)
100
10
1
I
D
, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
5.0V
0.1
10
5.0V
0.01
0.1
50µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
50µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 170A
I
D
, Drain-to-Source Current (A)
T
J
= 175
°
C
2.5
100
2.0
1.5
T
J
= 25
°
C
10
1.0
0.5
1
V DS = 50V
50µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFPS3810PbF
20
15000
I
D
= 100A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = Cds + Cgd
16
C, Capacitance(pF)
10000
12
Ciss
5000
8
Coss
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
200
300
400
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
1000
100
100
100µsec
1msec
T
J
= 25
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
10
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFPS3810PbF
200
LIMITED BY PACKAGE
160
V
DS
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
120
80
Fig 10a.
Switching Time Test Circuit
40
V
DS
90%
0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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