SUM110N04-05H
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(Ω)
0.0053 at V
GS
= 10 V
I
D
(A)
110
Q
g
(Typ.)
95
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
• High Threshold Voltage at High Temperature
RoHS
COMPLIANT
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
Ordering Information:
SUM110N04-05H-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power Dissipation
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
DM
I
AR
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
E
AR
P
D
T
J
, T
stg
Limit
40
20
110
70
300
50
125
150
b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
PCB Mount
c
Symbol
R
thJA
R
thJC
Limit
40
1
Unit
°C/W
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
www.vishay.com
1
SUM110N04-05H
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
b
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 15 A
Min.
40
3.4
Typ.
Max.
Unit
3.8
5.0
± 100
1
50
250
V
nA
µA
A
120
0.0044
0.0053
0.008
0.0106
20
50
Ω
S
6700
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
600
320
95
V
DS
= 20 V, V
GS
= 10 V, I
D
= 50 A
f = 1.0 MHz
V
DD
= 20 V, R
L
= 0.4
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 2.5
Ω
37
21
1.7
20
95
50
12
30
145
75
20
100
300
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/µs
0.90
40
1.50
60
ns
Ω
nC
pF
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
I
S
I
SM
V
SD
t
rr
A
V
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 73131
S-80274-Rev. B, 11-Feb-08
SUM110N04-05H
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
V
GS
= 10 thru
8 V
200
I
D
- Drain Current (A)
I
D
- Drain Current (A)
7
V
150
200
250
150
100
6
V
50
5
V
0
0
2
4
6
8
10
100
T
C
= 125 °C
50
25 °C
- 55 °C
0
0
1
2
3
4
5
6
7
8
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
160
T
C
= - 55 °C
140
g
fs
- Transconductance (S)
120
125 °C
100
80
60
40
20
0
0
10
20
30
40
50
60
0.000
0
25 °C
r
DS(on)
- On-Resistance (Ω)
0.008
0.010
Transfer Characteristics
0.006
V
GS
= 10
V
0.004
0.002
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
8400
C
iss
V
GS
- Gate-to-Source
Voltage
(V)
16
6300
C - Capacitance (pF)
20
On-Resistance vs. Drain Current
V
DS
= 20
V
I
D
= 50 A
12
4200
8
2100
C
oss
C
rss
0
0
5
10
15
20
25
30
35
40
4
0
0
40
80
120
160
200
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
Gate Charge
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3
SUM110N04-05H
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
V
GS
= 10
V
I
D
= 30 A
1.7
I
S
- Source Current (A)
r
DS(on)
- On-Resistance
100
(Normalized)
1.4
T
J
= 150 °C
10
1.1
T
J
= 25 °C
0.8
0.5
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
54
100
I
AV
(A) at T
J
= 25 °C
10
V
(BR)DSS
(V)
51
I
D
= 1 mA
I
Dav
(A)
48
1
I
AV
(A) at T
J
= 150 °C
45
0.1
0.00001
0.0001
0.001
0.01
t
in
(s)
0.1
1
42
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
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Document Number: 73131
S-80274-Rev. B, 11-Feb-08
SUM110N04-05H
Vishay Siliconix
THERMAL RATINGS
125
1000
10
µs
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
100
µs
Limited
by
r
DS(on)
*
1 ms
10 ms, 100 ms, DC
10
75
1
0.1
T
C
= 25 °C
Single Pulse
50
25
0.01
0
0
25
50
75
100
125
150
175
0.001
0.1
*
V
GS
1
10
100
T
A
- Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
r
DS(on)
is specified
Safe Operating Area
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?73131.
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
www.vishay.com
5
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