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TN2106N3-P014-G: 产品描述MOSFET 60V 2.5Ohm; 产品类别半导体分立半导体; 文件大小534KB，共6页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com

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TN2106N3-P014-G概述

MOSFET 60V 2.5Ohm

TN2106N3-P014-G规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Microchip(微芯科技)
产品种类 Product Category	MOSFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	300 mA
Rds On - Drain-Source Resistance	2.5 Ohms
Vgs - Gate-Source Voltage	20 V
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
系列 Packaging	Cut Tape
系列 Packaging	Reel
产品 Product	MOSFET Small Signal
Transistor Type	1 N-Channel
类型 Type	FET
Fall Time	5 ns
Pd-功率耗散 Pd - Power Dissipation	740 mW
Rise Time	5 ns
工厂包装数量 Factory Pack Quantity	2000
Typical Turn-Off Delay Time	6 ns
Typical Turn-On Delay Time	3 ns
单位重量 Unit Weight	0.016000 oz

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TN2106

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

ISS

and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Complementary N- and P-channel devices

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Applications

►

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo-voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Ordering Information

Device

TN2106

Package Option

TO-236AB (SOT-23)

TN2106K1-G

TO-92

TN2106N3-G

DSS

/BV

DGS

(V)

DS(ON)

(max)

(Ω)

GS(th)

(max)

(V)

2.5

2.0

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁgurations

DRAIN

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

Soldering temperature*

Value

DSS

DGS

±20V

-55

C to +150

300

GATE

TO-236AB (SOT-23) (K1)

TO-92 (N3)

Product Marking

N1LW

W = Code for week sealed

= “Green” Packaging

TO-236AB (SOT-23) (K1)

2 1 0 6

YYWW

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Distance of 1.6mm from case for 10 seconds.

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92 (N3)

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

●

Tel: 408-222-8888

●

www.supertex.com

TN2106N3-P014-G相似产品对比

	TN2106N3-P014-G	TN2106N3-G	TN2106K1	TN2106N3	TN2106N3-P002	TN2106N3-P003	TN2106N3-P013
描述	MOSFET 60V 2.5Ohm	MOSFET 60V 2.5Ohm	MOSFET 60V 2.5Ohm	MOSFET 60V 2.5Ohm	MOSFET 60V 2.5Ohm	MOSFET 60V 2.5Ohm	MOSFET 60V 2.5Ohm
Product Attribute	Attribute Value	-	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	Microchip(微芯科技)	-	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)
产品种类 Product Category	MOSFET	-	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
RoHS	Details	-	N	N	N	N	N
技术 Technology	Si	-	Si	Si	Si	Si	Si
安装风格 Mounting Style	Through Hole	-	SMD/SMT	Through Hole	Through Hole	Through Hole	Through Hole
封装 / 箱体 Package / Case	TO-92-3	-	SOT-23-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3
Number of Channels	1 Channel	-	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	-	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V	-	60 V	60 V	60 V	60 V	60 V
Id - Continuous Drain Current	300 mA	-	280 mA	300 mA	300 mA	300 mA	300 mA
Rds On - Drain-Source Resistance	2.5 Ohms	-	2.5 Ohms	2.5 Ohms	2.5 Ohms	2.5 Ohms	2.5 Ohms
Vgs - Gate-Source Voltage	20 V	-	20 V	20 V	20 V	20 V	20 V
最小工作温度 Minimum Operating Temperature	- 55 C	-	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C	-	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	-	Single	Single	Single	Single	Single
Channel Mode	Enhancement	-	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement
产品 Product	MOSFET Small Signal	-	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal
Transistor Type	1 N-Channel	-	1 N-Channel	1 N-Channel	1 N-Channel	1 N-Channel	1 N-Channel
类型 Type	FET	-	FET	FET	FET	FET	FET
Fall Time	5 ns	-	5 ns	5 ns	5 ns	5 ns	5 ns
Pd-功率耗散 Pd - Power Dissipation	740 mW	-	360 mW	740 mW	740 mW	740 mW	740 mW
Rise Time	5 ns	-	5 ns	5 ns	5 ns	5 ns	5 ns
工厂包装数量 Factory Pack Quantity	2000	-	3000	1000	2000	2000	2000
Typical Turn-Off Delay Time	6 ns	-	6 ns	6 ns	6 ns	6 ns	6 ns
Typical Turn-On Delay Time	3 ns	-	3 ns	3 ns	3 ns	3 ns	3 ns
单位重量 Unit Weight	0.016000 oz	-	0.000282 oz	0.007760 oz	0.007760 oz	0.007760 oz	0.007760 oz
高度 Height	-	-	0.95 mm	5.33 mm	5.33 mm	5.33 mm	5.33 mm
长度 Length	-	-	2.9 mm	5.21 mm	5.21 mm	5.21 mm	5.21 mm
宽度 Width	-	-	1.3 mm	4.19 mm	4.19 mm	4.19 mm	4.19 mm

TN2106N3-P014-G

TN2106N3-P014-G在线购买

TN2106N3-P014-G概述

TN2106N3-P014-G规格参数

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