SMD Efficient Fast Recovery Rectifiers
CEFB201-G Thru. CEFB205-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.220(5.59)
0.200(5.08)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
DO-214AA (SMB)
0.155(3.94)
0.130(3.30)
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
2.0A
Reverse recovery time
Max. DC reverse current at T
A
=25
rated DC blocking voltage T
A
=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
Symbol
V
RRM
V
DC
V
RMS
CEFB201-G CEFB202-G CEFB203-G CEFB204-G CEFB205-G
50
50
35
100
100
70
200
200
140
400
400
280
600
600
420
Units
V
V
V
I
FSM
35
45
A
I
O
V
F
T
rr
C
C
I
R
R
θJL
T
J
T
STG
0.875
25
2.0
1.1
35
5.0
250
15
150
-55 to +150
O
A
1.25
50
V
nS
μA
C/W
O
O
C
C
O
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper pad area.
REV:A
QW-BE004
Page 1
Comchip Technology CO., LTD.
SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFB201-G thru CEFB205-G)
Fig.1 Reverse Characteristics
100
10
Fig.2 Forward Characteristics
CEFB201-G~203-G
CEFB204-G
Rever s e C urr e n t (μA )
10
T
J
=125
O
C
1
F o r w a rd C u rren t
(A)
CEFB205-G
1
T
J
=75 C
O
0.1
T
J
=25
O
C
0.1
0.01
T
J
=25 C
Pulse width 300μS
4% duty cycle
O
0.01
0
20
40
60
80
100
120
140
0.001
0
0.4
0.8
1.2
1.6
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
200
Fig.4 Non-repetitive Forward Surge Current
50
100
Peak F or ward Surge C ur re nt A )
(
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
J u n c ti o n C apacian ce(p F )
t
40
30
20
10
T
J
=25
O
C
f=1MHz and applied
4VDC reverse voltage
10
2
0.1
0
1
10
100
1
10
100
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
2.8
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
trr
2.4
2.0
1.6
1.2
0.8
0.4
0
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
(+)
OSCILLLISCOPE
(NOTE 1)
0
-0.25A
Average Forward Current (A)
1Ω
NON-
INDUCTIVE
Single phase
Half wave 60Hz
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
0
25
50
75
100
125
150
O
175
Ambient Temperature (
C)
REV:A
QW-BE004
Page 2
Comchip Technology CO., LTD.
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