50UQ03GPbF
Vishay High Power Products
Schottky Rectifier, 5.5 A
FEATURES
• 150 °C T
J
operation
Base
cathode
4, 2
• Unique I-PAK outline
• Center tap configuration
• Small foot print
• Low forward voltage drop
• High frequency operation
Available
RoHS*
COMPLIANT
I-PAK
1
Anode
3
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for AEC Q101 level
PRODUCT SUMMARY
I
F(AV)
V
R
5.5 A
30 V
DESCRIPTION
The 50UQ03GPbF I-PAK Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, freewheeling
diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
5 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
5.5
30
240
0.35
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
50UQ03GPbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 136 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2.0 A, L = 5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
5.5
240
100
10
2.0
mJ
A
A
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94231
Revision: 17-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
50UQ03GPbF
Vishay High Power Products
Schottky Rectifier, 5.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
5A
Maximum forward voltage drop
See fig. 1
V
FM (1)
10 A
5A
10 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
T
J
= 25 °C
T
J
= 125 °C
T
J
=T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.46
0.53
0.39
0.48
1.1
58
0.19
22.22
590
5.0
mA
V
mΩ
pF
nH
V
UNITS
T
J
= 125 °C
V
R
= Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJC
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
3.0
0.3
0.01
UNITS
°C
°C/W
g
oz.
Case style I-PAK (similar to TO-251SL)
50UQ03G
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94231
Revision: 17-Oct-08
50UQ03GPbF
Schottky Rectifier, 5.5 A
Vishay High Power Products
I
F
- Instantaneous Forward Current (A)
100
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.001
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
0.1
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94231
Revision: 17-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
50UQ03GPbF
Vishay High Power Products
Schottky Rectifier, 5.5 A
150
3.5
Allowable Case Temperature (°C)
DC
140
Average Power Loss (W)
145
3.0
2.5
2.0
1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
135
130
125
Square
wave
(D = 0.50)
80 %
rated
V
R
applied
DC
1.0
0.5
0
See note (1)
120
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and
with
rated
V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94231
Revision: 17-Oct-08
50UQ03GPbF
Schottky Rectifier, 5.5 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
50
1
1
2
3
4
5
6
U
2
-
-
-
-
-
-
Q
3
03
4
G
5
PbF
6
Current rating
Package:
U = I-PAK
Q = Schottky “Q” series
Voltage rating code x 10 = V
RRM
(03 = 30 V)
Schottky generation
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
http://www.vishay.com/doc?95047
http://www.vishay.com/doc?95055
Document Number: 94231
Revision: 17-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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