IR25607SPBF
High and Low Side Driver
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
V
OFFSET
I
O+/-
V
OUT
Ton/off (typ.)
Delay Matching (typ.)
600V max.
2A / 2A
10 – 20V
120 & 94 ns
20 ns
Description
The IR25607 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side
referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which
operates up to 600 V
.
Package Options
16 Lead SOIC Wide Body
Ordering Information
Base Part Number
IR25607SPBF
IR25607SPBF
Standard Pack
Package Type
SO16W
SO16W
Form
Tube
Tape and Reel
Quantity
45
1000
Orderable Part Number
IR25607SPBF
IR25607STRPBF
1
www.irf.com
© 2013 International Rectifier
March 26, 2013
IR25607SPBF
Typical Connection Diagram
up to 600V
2
www.irf.com
© 2013 International Rectifier
March 26, 2013
IR25607SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dVs/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD )
Allowable offset supply voltage transient
Package power dissipation @ T
A
≤ +25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
V
CC
– 25
V
SS
-0.3
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
SS
+ 25
V
CC
+ 0.3
V
DD
+ 0.3
50
1.25
100
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The V
S
and V
SS
offset
ratings are tested with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
T
A
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD )
Ambient temperature
Min.
V
S
+ 10
†
V
S
10
0
V
SS
+ 3
-5
††
V
SS
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
SS
+ 20
5
V
DD
125
Units
V
°C
†
Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to Design Tip DT97-3 for more
details).
††
When V
DD
< 5V, the minimum V
SS
offset is limited to -V
DD
.
3
www.irf.com
© 2013 International Rectifier
March 26, 2013
IR25607SPBF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, CL = 1000 pF, V
SS
= COM and T
A
= 25°C unless otherwise specified.
Symbol
ton
toff
tsd
tr
tf
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
Min.
—
—
—
—
—
—
Typ.
120
94
110
25
17
—
Max.
150
125
140
35
25
20
ns
Units
Test Conditions
V
S
= 0V
V
S
= 600V
V
S
= 600V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, V
SS
= COM and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to V
SS
and are applicable to all three logic input leads: HIN, LIN and SD. The V
O
and
I
O
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
I
O+
I
O-
Definition
Logic ―1‖ input voltage
Logic ―0‖ input voltage
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Quiescent V
CC
supply current
Logic ―1‖ input bias current
Logic ―0‖ input bias current
V
BS
supply undervoltage positive
going threshold
V
BS
supply undervoltage negative
going threshold
V
CC
supply undervoltage positive
going threshold
V
CC
supply undervoltage negative
going threshold
Output high short circuit pulsed
current
Output low short circuit pulsed
current
Min.
9.5
—
—
—
—
—
—
—
—
—
7.5
7.0
7.4
7.0
2
2
Typ.
—
—
—
—
—
125
180
15
20
—
8.6
8.2
8.5
8.2
2.5
2.5
Max.
—
6.0
1.2
0.1
50
230
340
30
40
1
9.7
9.4
9.6
9.4
—
A
—
V
O
= 0V, V
IN
= V
DD
PW ≤ 10 μs
V
O
= 15V, V
IN
= V
DD
PW ≤ 10 μs
V
Units
Test Conditions
V
μA
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 600V
V
IN
= 0V or V
DD
V
IN
= 0V or V
DD
V
IN
= 0V or V
DD
V
IN
= V
DD
V
IN
= 0V
4
www.irf.com
© 2013 International Rectifier
March 26, 2013
IR25607SPBF
Functional Block Diagram
5
www.irf.com
© 2013 International Rectifier
March 26, 2013
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
