NCP45541
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low R
ON
The NCP45541 load switch provides a component and area-
reducing solution for efficient power domain switching with inrush
current limit via soft−start. In addition to integrated control
functionality with ultra low on−resistance, this device offers system
monitoring via power good signaling. This cost effective solution is
ideal for power management and hot-swap applications requiring low
power consumption in a small footprint.
Features
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R
ON
TYP
7.7 mW
8.0 mW
9.2 mW
V
CC
3.3 V
3.3 V
3.3 V
V
IN
1.8 V
5.0 V
12 V
I
MAX
20 A
•
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Advanced Controller with Charge Pump
Integrated N-Channel MOSFET with Low R
ON
Input Voltage Range 0.5 V to 13.5 V
Soft-Start via Controlled Slew Rate
Adjustable Slew Rate Control
Power Good Signal
Extremely Low Standby Current
Load Bleed (Quick Discharge)
This is a Pb−Free Device
Portable Electronics and Systems
Notebook and Tablet Computers
Telecom, Networking, Medical, and Industrial Equipment
Set−Top Boxes, Servers, and Gateways
Hot−Swap Devices and Peripheral Ports
V
CC
EN
PG
V
IN
1
DFN12, 3x3
CASE 506CD
MARKING DIAGRAM
NCP45
541−x
ALYWG
G
x = H for NCP45541−H
= L for NCP45541−L
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
Bandgap
&
Biases
Control
Logic
V
IN
EN
PIN CONFIGURATION
1
2
3
4
5
6
(Top View)
13: V
IN
12
11
10
9
8
7
V
OUT
V
OUT
V
OUT
V
OUT
NC
BLEED
Charge
Pump
Delay and
Slew Rate
Control
V
CC
GND
SR
SR
GND
BLEED
V
OUT
PG
Figure 1. Block Diagram
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2015
May, 2018
−
Rev. 5
1
Publication Order Number:
NCP45541/D
NCP45541
Table 1. PIN DESCRIPTION
Pin
1, 13
2
Name
V
IN
EN
Function
Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 13
NCP45541−H
−
Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to
GND
NCP45541−L
−
Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to V
CC
3
4
5
6
7
8
9−12
V
CC
GND
SR
PG
BLEED
NC
V
OUT
Supply voltage to controller (3.0 V
−
5.5 V)
Controller ground
Slew rate adjustment; float if not used
Active−high, open−drain output that indicates when the gate of the MOSFET is fully driven, external pull up
resistor
≥
1 kW to an external voltage source required; tie to GND if not used.
Load bleed connection, must be tied to V
OUT
either directly or through a resistor
≤
100 MW
No connect, internally floating but pin may be tied to V
OUT
Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Supply Voltage Range
Input Voltage Range
Output Voltage Range
EN Digital Input Range
PG Output Voltage Range (Note 1)
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)
Thermal Resistance, Junction−to−Case (V
IN
Paddle)
Continuous MOSFET Current @ T
A
= 25°C (Note 2)
Continuous MOSFET Current @ T
A
= 25°C (Note 3)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C (Note 3)
Derate above T
A
= 25°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
ESD Capability, Human Body Model (Notes 4 and 5)
ESD Capability, Charged Device Model (Note 4)
Latch−up Current Immunity (Notes 4 and 5)
Symbol
V
CC
V
IN
V
OUT
V
EN
V
PG
R
θJA
R
θJA
R
θJC
I
MAX
I
MAX
P
D
P
D
T
STG
T
SLD
ESD
HBM
ESD
CDM
LU
Value
−0.3
to 6
−0.3
to 18
−0.3
to 18
−0.3
to (V
CC
+ 0.3)
−0.3
to 6
30.9
51.3
3.5
20
15.5
3.24
32.4
1.95
19.5
−40
to 150
260
3.0
1.0
100
Unit
V
V
V
V
V
°C/W
°C/W
°C/W
A
A
W
mW/°C
W
mW/°C
°C
°C
kV
kV
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. PG is an open−drain output that requires an external pull up resistor
≥
1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Tested by the following methods @ T
A
= 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Charged Device Model per ESD STM5.3.1
Latch−up Current tested per JESD78
5. Rating is for all pins except for V
IN
and V
OUT
which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for V
IN
and V
OUT
should be expected and these devices should be treated as ESD sensitive.
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NCP45541
Table 3. RECOMMENDED OPERATING RANGES
Rating
Supply Voltage
Input Voltage
Ground
Ambient Temperature
Junction Temperature
Symbol
V
CC
V
IN
GND
T
A
T
J
−40
−40
Min
3
0.5
Max
5.5
13.5
0
85
125
Unit
V
V
V
°C
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
MOSFET
On−Resistance
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 5 V
V
CC
= 3.3 V; V
IN
= 12 V
Leakage Current (Note 7)
CONTROLLER
Supply Standby Current (Note 8)
V
EN
= 0 V; V
CC
= 3 V
V
EN
= 0 V; V
CC
= 5.5 V
Supply Dynamic Current (Note 9)
V
EN
= V
CC
= 3 V; V
IN
= 12 V
V
EN
= V
CC
= 5.5 V; V
IN
= 1.8 V
Bleed Resistance
V
EN
= 0 V; V
CC
= 3 V
V
EN
= 0 V; V
CC
= 5.5 V
EN Input High Voltage
EN Input Low Voltage
EN Input Leakage Current
V
CC
= 3 V
−
5.5 V
V
CC
= 3 V
−
5.5 V
NCP45541−H; V
EN
= 0 V
NCP45541−L; V
EN
= V
CC
EN Pull Down Resistance
EN Pull Up Resistance
PG Output Low Voltage (Note 10)
PG Output Leakage Current (Note 11)
Slew Rate Control Constant (Note 12)
NCP45541−H
NCP45541−L
V
CC
= 3 V; I
SINK
= 5 mA
V
CC
= 3 V; V
TERM
= 3.3 V
V
CC
= 3 V
V
IH
V
IL
I
IL
I
IH
R
PD
R
PU
V
OL
I
OH
K
SR
26
5.0
33
76
76
90
90
100
100
R
BLEED
86
72
2.0
0.8
500
500
124
124
0.2
100
40
kW
kW
V
nA
mA
I
DYN
I
STBY
0.65
3.2
180
475
115
97
2.0
4.5
300
680
144
121
V
V
nA
W
mA
mA
V
EN
= 0 V; V
IN
= 13.5 V
I
LEAK
R
ON
7.7
8.0
9.2
0.1
8.9
9.3
12.1
1.0
mA
mW
Conditions
(Note 6)
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. V
EN
shown only for NCP45541−H, (EN Active−High) unless otherwise specified.
7. Average current from V
IN
to V
OUT
with MOSFET turned off.
8. Average current from V
CC
to GND with MOSFET turned off.
9. Average current from V
CC
to GND after charge up time of MOSFET.
10. PG is an open-drain output that is pulled low when the MOSFET is disabled.
11. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor
≥
1 kW to
an external voltage source, V
TERM
.
12. See Applications Information section for details on how to adjust the slew rate.
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NCP45541
Table 5. SWITCHING CHARACTERISTICS
(T
J
= 25°C unless otherwise specified) (Notes 13 and 14)
Parameter
Output Slew Rate
Conditions
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Output Turn−on Delay
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Output Turn−off Delay
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Power Good Turn−on Time
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
Power Good Turn−off Time
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
13. See below figure for Test Circuit and Timing Diagram.
14. Tested with the following conditions: V
TERM
= V
CC
; R
PG
= 100 kW; R
L
= 10
W;
C
L
= 0.1
mF.
V
TERM
T
PG,OFF
T
PG,ON
T
OFF
T
ON
Symbol
SR
Min
Typ
11.8
12.0
13.3
13.5
200
170
260
250
2.0
1.6
0.7
0.4
1.02
0.95
1.52
1.23
20
14
20
14
ns
ms
ms
ms
Max
Unit
kV/s
OFF ON
EN
V
IN
V
CC
NCP45541−H
GND
R
PG
PG
V
OUT
BLEED
SR
R
L
C
L
V
EN
50%
T
ON
Dt
90%
DV
D
t
50%
T
OFF
90%
DV
SR =
V
OUT
10%
T
PG,ON
T
PG,OFF
50%
50%
V
PG
Figure 2. Switching Characteristics Test Circuit and Timing Diagrams
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NCP45541
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
10.5
R
ON
, ON−RESISTANCE (mW)
R
ON
, ON−RESISTANCE (mW)
10.0
9.5
9.0
8.5
8.0
7.5
7.0
0.5
2.5
4.5
6.5
8.5
10.5
12.5
V
CC
= 3 V
V
CC
= 5.5 V
13
12
11
10
9
8
7
6
−45 −30 −15
0
15
30
45
60
75
90 105 120
V
IN
= 5.0 V
V
CC
= 3.3 V
V
IN
= 12 V
V
IN
= 1.8 V
V
IN
, INPUT VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance vs. Input Voltage
I
STBY
, SUPPLY STANDBY CURRENT (mA)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
STBY
, SUPPLY STANDBY CURRENT (mA)
7
6
5
4
3
2
1
Figure 4. On−Resistance vs. Temperature
V
CC
= 5.5 V
V
CC
= 3 V
0
15
30
45
60
75
90 105 120
3.0
3.5
4.0
4.5
5.0
5.5
0
−45 −30 −15
V
CC
, SUPPLY VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Supply Standby Current vs. Supply
Voltage
I
DYN
, SUPPLY DYNAMIC CURRENT (mA)
I
DYN
, SUPPLY DYNAMIC CURRENT (mA)
500
450
400
350
300
250
200
150
100
0.5
2.5
4.5
6.5
V
CC
= 5.5 V
V
CC
= 3 V
8.5
10.5
12.5
500
450
400
350
300
250
200
150
100
3.0
Figure 6. Supply Standby Current vs.
Temperature
V
IN
= 1.8 V
V
IN
= 12 V
3.5
4.0
4.5
5.0
5.5
V
IN
, INPUT VOLTAGE (V)
V
CC
, SUPPLY VOLTAGE (V)
Figure 7. Supply Dynamic Current vs. Input
Voltage
Figure 8. Supply Dynamic Current vs. Supply
Voltage
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