time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev.A, 07/19/2016
3
IS32LT3175N/P
ABSOLUTE MAXIMUM RATINGS
VCC, OUT, PWM
EN, ISET, TSET_UP, TSET_DN
Ambient operating temperature, T
A
=T
J
Maximum continuous junction temperature, T
J(MAX)
Storage temperature range, T
STG
Maximum power dissipation, P
DMAX
ESD (HBM)
ESD (CDM)
-0.3V ~ +45V
-0.3V ~ +7.0V
-40°C ~ +125°C
150°C
-55°C ~ +150°C
1.96W
±2kV
±750V
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Package Thermal Resistance
(Junction to Ambient),
θ
JA
Package Thermal Resistance
(Junction to Pad),
θ
JP
Test Conditions
On 4-layer PCB based on JEDEC standard
at 1W, T
A
=25°C
Value
50.98°C/W
2.24°C/W
ELECTRICAL CHARACTERISTICS
T
J
= -40°C ~ +125°C, V
CC
=12V, refer to each condition description. Typical values are at T
J
= 25°C.
Symbol
V
CC
V
DO
Parameter
Supply voltage range
Minimum dropout
voltage
V
CC
–V
OUT
, I
OUT
= -150mA (Note 1)
V
CC
–V
OUT
, I
OUT
= -100mA (Note 2)
PWM pin floating. EN disables the output.
I
CC
Quiescent supply
current
R
ISET
=15kΩ, EN enable the output, PWM floating,
OUT floating
V
CC
=4.2V, EN enable the output. V
PWM
=4V for
IS32LT3175P and V
PWM
=GND for IS32LT3175N.
t
ON
Startup time
V
CC
> 6V to I
OUT
<-5mA (Note 4)
V
CC
–V
OUT
=1V, OUT sourcing current,
ISET pin connected to GND.
R
ISET
= 15kΩ, V
CC
–V
OUT
=1V,-40°C<T
J
<+125°C
-50mA≤I
OUT
≤-20mA,
V
CC
–V
OUT
=1V,
-40°C< T
J
<+125°C
-150mA≤I
OUT
<-50mA, V
CC
–V
OUT
=1V,
-40°C< T
J
<125°C
I
OUT
= -50mA, 6V<V
CC
<18V, V
OUT
= V
CC
-2V
(Note 4)
2.5V< V
OUT
<V
CC
-2.0V,I
OUT
= -50mA (Note 4)
Current rise/fall between 0%~100%, V
TSET
= 0V
Delay time between PWM rising edge to 10% of
I
OUT
-240
-105
-8
-6
-0.2
-0.2
45
70
10
-205
-100
0.1
2.3
0.25
Condition
Min.
5
Typ.
Max. Unit
42
900
700
1
3.8
0.6
400
-160
-95
8
6
0.2
0.2
100
17
V
mV
mV
mA
mA
mA
μs
mA
mA
%
%
mA/V
mA/V
μs
μs
I
OUT_LIM
Output limit current
I
OUT
Output current
(Note 3)
Absolute current
accuracy (Note 3)
Output current line
regulation
Output current load
regulation
Current slew time
PWM current latency
E
OUT
g
LINE
g
LOAD
t
SL
t
TD_ON
Integrated Silicon Solution, Inc. – www.issi.com
Rev.A, 07/19/2016
4
IS32LT3175N/P
ELECTRICAL CHARACTERISTICS (CONTINUE)
T
J
= -40°C ~ +125°C, V
CC
=12V, the detail refer to each condition description. Typical values are at T
J
= 25°C.
Symbol
Parameter
Release from under voltage
lock out V
CC
voltage
Condition
V
CC
rising release from UVLO
4.1
Min.
Typ.
4.6
4.5
Max.
4.8
4.7
Unit
V
V
UVLO
Into under voltage lock out V
CC
V
CC
falling into UVLO
voltage
Logic Input TSET_UP, TSET_DN
V
TSET
Voltage reference
T
ACC
Fade timing accuracy
*Neglecting the R
TSET
Tolerance*
R
TSET_UP
=100kΩ, T
J
= 25°C
-5
1
5
V
%
Logic Input PWM – Active High (IS32LT3175P)
V
IL
V
IH
I
PD
Input low voltage
Input high voltage
(Note 4)
V
PWM
=12V
Internal pull-down current
2
150
15
350
28
46
0.8
V
V
mV
μA
V
IN_HY
Input hysteresis
Logic Input PWM – Active Low (IS32LT3175N)
V
IL
V
IH
I
PU
Input low voltage
Input high voltage
(Note 4)
V
PWM
=GND
Internal pull-up current
2
150
20
350
38
58
0.8
V
V
mV
μA
V
IN_HY
Input hysteresis
Logic Input EN
V
IL
V
IH
R
PU
I
PU
t
SW
Input low voltage
Input high voltage
(Note 4)
(Note 4)
V
EN
=0
EN pin must not change state within
this time to be interpreted as a switch
press or release
55
25
Internal pull-up resistor
Internal pull-up current
EN input debounce time
2
150
350
50
75
37
95
50
0.8
V
V
mV
kΩ
μA
ms
V
IN_HY
Input hysteresis
Protection
V
SCD
t
FD
T
RO
T
SD
T
HY
Short detect voltage
Fault detect persistence time
Thermal roll off threshold
Thermal shutdown threshold
Over temperature hysteresis
Measured at OUT
(Note 4)
(Note 4)
Temperature increasing (Note 4)
Recovery = T
SHT
– T
J_HY
(Note 4)
1.2
220
5
145
175
30
1.8
V
mV
ms
°C
°C
°C
V
SCD_HY
Short detect voltage hysteresis Measured at OUT
Note 1:
I
OUT
output current in case of V
CC
-Vout=V
DO
called I
OUT_VDO
. I
OUT
output current in case of V
CC
-V
OUT
=2V called I
OUT_VDO2V
, V
DO
accuracy is
computed as |I
OUT_VDO
-I
OUT_VDO2V
|/I
OUT_VDO2V
<5%.
Note 2:
I
OUT
output current in case of V
CC
-V
OUT
=V
DO
called I
OUT_VDO
. I
OUT
output current in case of V
CC
-V
OUT
=1V called I
OUT_VDO1V
, V
DO
accuracy is
computed as |I
OUT_VDO
-I
OUT_VDO1V
|/I
OUT_VDO1V
<5%.
Note 3:
Output current accuracy is not intended to be guaranteed at output voltages less than 1.8V.
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[详细]
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