MBT3904DW1T1G,
MBT3904DW2T1G,
SMBT3904DW1T1G
Dual General Purpose
Transistors
The MBT3904DW1T1G and MBT3904DW2T1G devices are a
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−363 six−leaded surface mount package. By putting two
discrete devices in one package, this device is ideal for low−power
surface mount applications where board space is at a premium.
Features
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MARKING
DIAGRAM
6
6
1
SOT−363/SC−88/
SC70−6
CASE 419B
1
XX MG
G
•
•
•
•
•
•
•
h
FE
, 100−300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
ESD
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
XX = MA for MBT3904DW1T1G
MJ for MBT3904DW2T1G
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
MBT3904DW1T1
STYLE 1
(3)
(2)
(6)
(1)
Q
2
Q
1
HBM Class 2
MM Class B
(4)
(5)
MBT3904DW2T1
STYLE 27
(6)
Stresses exceeding Maximum Ratings may damage the device. Maximum Rat-
ings are stress ratings only. Functional operation above the Recommended Op-
erating Conditions is not implied. Extended exposure to stresses above the Re-
commended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MBT3904DW1T1G
Package
SOT−363
(Pb−Free)
Shipping
†
3000 /
Tape & Reel
3000 /
Tape & Reel
3000 /
Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to +150
Unit
mW
°C/W
°C
SMBT3904DW1T1G SOT−363
(Pb−Free)
MBT3904DW2T1G
SOT−363
(Pb−Free)
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT3904DW1T1/D
©
Semiconductor Components Industries, LLC, 2012
October, 2012
−
Rev. 9
1
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Vdc
40
60
6.0
−
−
−
Vdc
−
Vdc
−
nAdc
50
nAdc
50
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
h
FE
−
40
70
100
60
30
−
−
0.65
−
−
−
300
−
−
Vdc
0.2
0.3
Vdc
0.85
0.95
V
CE(sat)
V
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small
−Signal
Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
2. Pulse Test: Pulse Width
≤
300
ms;
Duty Cycle
≤
2.0%.
f
T
C
obo
C
ibo
h
ie
MHz
300
−
−
1.0
2.0
0.5
0.1
100
100
1.0
3.0
−
−
−
pF
4.0
pF
8.0
10
12
8.0
10
−
400
400
40
60
5.0
4.0
mmhos
k
W
h
re
X 10
−
4
h
fe
h
oe
NF
dB
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2
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
=
−
0.5 Vdc)
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
(I
B1
= I
B2
= 1.0 mAdc)
Symbol
t
d
t
r
t
s
t
f
Min
−
−
−
−
Max
35
35
200
50
Unit
ns
ns
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
+3 V
+10.9 V
275
10 k
0
- 0.5 V
< 1 ns
C
s
< 4 pF*
- 9.1 V′
< 1 ns
1N916
C
s
< 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure
Figure 10. Noise Figure
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
h fe , CURRENT GAIN
200
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 11. Current Gain
20
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
10
7.0
5.0
3.0
2.0
Figure 12. Output Admittance
2.0
1.0
0.5
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
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