AUTOMOTIVE GRADE
AUIRF5210S
V
DSS
R
DS(on)
I
D
D
Features
Advanced Process Technology
P-Channel MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
-100V
max.
60m
-38A
S
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications..
Base part number
AUIRF5210S
Package Type
D
2
-Pak
G
D
2
Pak
AUIRF5210S
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF5210S
AUIRF5210STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv./dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-38
-24
-140
3.1
170
1.3
± 20
120
-23
17
-7.4
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
0.75
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF5210S
Min. Typ. Max. Units
Conditions
-100 ––– –––
V V
GS
= 0V, I
D
= -250µA
––– -0.11 ––– V/°C Reference to 25°C, I
D
= -1mA
––– –––
60
m V
GS
= -10V, I
D
= -38A
-2.0
––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
9.5
––– –––
S V
DS
= -50V, I
D
= -23A
––– ––– -50
V
DS
= -100V, V
GS
= 0V
µA
––– ––– -250
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
––– ––– -100
V
GS
= -20V
nA
––– ––– 100
V
GS
= 20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
150
22
81
14
63
72
55
4.5
7.5
2780
800
430
230
33
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= -23A
nC
V
DS
= -80V
V
GS
= -10V
V
DD
= -50V
I
D
= -23A
ns
R
G
= 2.4
V
GS
= -10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -23A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -23A, V
DD
= -25V
nC di/dt = -100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max. Units
–––
–––
-38
-140
––– -1.6
170 260
1180 1770
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.46mH, R
G
= 25, I
AS
= -23A.(See Fig.12)
SD
-23A, di/dt
-650A/µs,
V
DD
V
(BR)DSS
, T
J
150°C.
I
Pulse width
300µs;
duty cycle
2%.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R
is measured at T
J
of approximately 90°C.
2
2015-9-30
AUIRF5210S
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
-4.5V
1
-4.5V
1
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
-V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -38A
-I D, Drain-to-Source Current (A)
100
T J = 25°C
T J = 150°C
VGS = -10V
1.5
10
1.0
1
VDS = -50V
60µs
PULSE WIDTH
0.1
2
4
6
8
10
12
14
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
2015-9-30
3
AUIRF5210S
100000
C oss = Cds + Cgd
-V GS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = Cgs + Cgd, C ds SHORTED
C rss = Cgd
12.0
ID= -23A
10.0
8.0
6.0
4.0
2.0
0.0
VDS = -80V
VDS = -50V
VDS = -20V
C, Capacitance(pF)
10000
C iss
1000
C oss
C rss
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T J = 150°C
10
T J = 25°C
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100µsec
1msec
10msec
100
1000
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-VSD, Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-9-30
AUIRF5210S
40
35
-I D, Drain Current (A)
30
25
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
1
2
3
3
C
Ri (°C/W)
0.128309
0.377663
0.244513
i
(sec)
0.000069
0.001772
0.010024
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-9-30
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