PD- 95023C
IRF7811WPbF
HEXFET
®
Power MOSFET for DC-DC Converters
•
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
100% Tested for Rg
Lead-Free
S
S
S
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811WPbF has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811WPbF offers particulary low R
DS(on)
and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
G
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7811WPbF
R
DS
(on)
Q
G
Q
sw
Q
oss
9.0mΩ
22nC
10.1nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
L
= 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
40
20
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25°C
T
L
= 90°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7811WPbF
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
°C
A
W
A
Units
V
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1
01/06/09
IRF7811WPbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
1.0
30
150
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d (off)
t
f
C
iss
C
oss
–
–
–
22
16.3
3.5
1.2
8.8
10.1
12
2.0
11
11
29
9.9
2335
400
119
–
–
–
pF
V
DS
= 16V, V
GS
= 0
ns
4.0
Ω
V
DD
= 16V, I
D
= 15A
V
GS
= 5.0V
Clamped Inductive Load
V
DS
= 16V, V
GS
= 0
nC
±100
33
µA
nA
Min
30
Typ
–
9.0
Max
–
12
Units
V
m
Ω
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
Gate-Source Leakage
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
V
GS
= ±12V
V
GS
=5.0V, I
D
=15A, V
DS
=16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A, V
GS
= 5.0V
Current*
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
V
SD
Q
rr
Q
rr(s)
45
41
Min
Typ
Max
1.25
Units
V
nC
nC
Conditions
I
S
= 15A, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
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Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical values of R
DS
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 15A.
2
IRF7811WPbF
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
6.0
1.5
VGS, Gate-to-Source Voltage (V)
ID= 15A
VDS = 16V
4.0
1.0
2.0
0.5
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
0.0
0
4
8
12
16
20
24
T
J
, Junction Temperature (
°
C)
QG, Total Gate Charge (nC)
Fig 1.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Gate Charge Vs.
Gate-to-Source Voltage
RDS(on) , Drain-to -Source On Resistance (Ω )
0.020
4000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
3000
0.015
C, Capacitance(pF)
Ciss
2000
ID = 15A
0.010
1000
Coss
0.005
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
1
Crss
10
100
VGS, Gate -to -Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs.
Drain-to-Source Voltage
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3
IRF7811WPbF
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
10
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
T
J
= 25
°
C
1
T
J
= 25
°
C
1
0.1
2.5
V DS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
GS
, Gate-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode
Forward Voltage
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
P
DM
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
0.0001
t
1
, Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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4
IRF7811WPbF
SO-8 Package Outline
(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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5
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