StrongIRFET
IRFR7446PbF
Applications
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
PWM Inverterized topologies
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
40V
3.0m
Ω
3.9mΩ
120A
56A
c
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dv/dt and dI/dt Capability
l
Lead-Free
G
S
G
D-Pak
IRFR7446TRPbF
D
S
Gate
Drain
Source
Ordering Information
Orderable part number
IRFR7446PBF
IRFR7446TRPBF
Package Type
D-PAK
D-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Complete Part Number
IRFR7446PBF
IRFR7446TRPBF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
10
120
ID = 56A
LIMITED BY PACKAGE
100
ID, Drain Current (A)
20
8
80
60
40
20
0
6
TJ = 125°C
4
TJ = 25°C
2
4
8
12
16
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC, Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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IRFR7446PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
120
56
520
98
0.66
± 20
-55 to + 175
300
125
251
See Fig 15,16, 23a, 23b
W
W/°C
V
°C
c
84
c
Units
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
e
Single Pulse Avalanche Energy
l
Avalanche Current
d
Repetitive Avalanche Energy
d
Single Pulse Avalanche Energy
Parameter
Junction-to-Case
mJ
A
mJ
Units
°C/W
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
k
Typ.
Max.
1.52
50
110
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
k
j
–––
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
26
3.0
4.4
3.0
–––
–––
–––
–––
1.5
Max.
–––
–––
3.9
–––
3.9
1.0
150
100
-100
–––
Ω
nA
Units
V
mΩ
mΩ
V
μA
Conditions
V
GS
= 0V, I
D
= 250μA
Ãd
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 56A
V
GS
= 6.0V, I
D
g
= 28A
g
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.08mH
R
G
= 50Ω, I
AS
= 56A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1306A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 22A, V
GS
=10V.
L
D
and L
S
are Internal Drain Inductance and Internal Source Inductance
*
2
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IRFR7446PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
65
18
22
43
9.8
13
32
20
3150
480
330
570
680
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 56A
I
D
=56A
V
DS
=20V
V
GS
= 10V
I
D
= 56A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V
See Fig. 12
V
GS
= 0V, V
DS
= 0V to 32V
Ãg
ns
pF
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
–––
–––
––– 120
–––
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
A
A
Ãd
480
Peak Diode Recovery
Reverse Recovery Time
f
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
–––
0.9
1.3
V T
J
= 25°C, I
S
= 56A, V
GS
= 0V
–––
4.8
––– V/ns T
J
= 175°C, I
S
= 56A, V
DS
= 40V
V
R
= 34V,
–––
20
–––
ns T
J
= 25°C
T
J
= 125°C
I
F
= 56A
–––
21
–––
di/dt = 100A/μs
–––
13
–––
nC T
J
= 25°C
T
J
= 125°C
–––
13
–––
–––
1.8
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*
g
g
3
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January 6, 2015
IRFR7446PbF
1000
1000
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.3V
TOP
100
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.3V
10
4.3V
10
1
4.3V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
≤
60μs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
2.0
Fig 4.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 56A
VGS = 10V
1.5
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
1.0
VDS = 10V
≤
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Fig 6.
Normalized On-Resistance vs. Temperature
16
ID= 56A
12
VDS = 32V
VDS = 20V
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
1000
8
Coss
Crss
4
100
1
10
100
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
January 6, 2015
IRFR7446PbF
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100μsec
100
1msec
L
imited by Package
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
TJ = 175°C
10
TJ = 25°C
1
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
DC
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
49
48
47
Id = 1.0mA
Fig 10.
Maximum Safe Operating Area
0.4
0.3
45
44
43
Energy (μJ)
46
0.2
0.1
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
(
RDS(on), Drain-to -Source On Resistance m
Ω)
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
Fig 12.
Typical C
OSS
Stored Energy
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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January 6, 2015
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