Advance Product Information
January 12, 2004
Ku-Band VSAT Packaged Amplifier
•
•
•
•
•
•
•
Top View
Bottom View
TGA2508-EPU-SM
Key Features
Typical Frequency Range: 12 - 19 GHz
25 dB Nominal Gain
29 dBm Nominal P1dB
Bias Conditions: 7 V, 433 mA
PHEMT Technology
Low cost true surface mount package
Package Dimensions:
4.0 x 4.0 x 0.9 mm
(0.157 x 0.157 x 0.035 in)
Preliminary Measured Data
Bias Conditions: Vd = 7 V, Id = 433 mA
30
20
S-Parameter (dB)
10
0
-10
-20
-30
-40
10
11
12
13
14
15
Primary Applications
•
•
VSAT Ground Terminals
Point to Point Radio
Military Ku Band
Ku-Band Space
GAIN
ORL
•
•
IRL
16
17
18
19
20
Frequency (GHz
)
35
30
P1dB (dBm)
25
20
15
10
12
13
14
15
16
17
18
19
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
TGA2508-EPU-SM
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
V
+
-
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Package Operating Temperature
VALUE
8V
-2 to 0 V
591 mA
16 mA
17 dBm
4.7 W
150 C
250 C
-65 to 150 C
-40 to 110 C
0
0
0
0
NOTES
4/
V
I
+
4/
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
T
CASE
3/ 4/
1/ 2/
1/
2/
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
When operated at this bias condition with a base plate temperature of 70 C, the median life is
4.3E+6 hrs.
0
3/
4/
5/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
These ratings represent the maximum operable values for this device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
TGA2508-EPU-SM
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C ± 5
o
C)
PARAMETER
Frequency Range
Drain Operating
Quiescent Current
Small Signal Gain
Input Return Loss (Linear Small Signal)
Output Return Loss (Linear Small Signal
Output Power @ 1 dB Compression Gain
TYPICAL
12 - 19
7
433
25
15
7
29
UNITS
GHz
V
mA
dB
dB
dB
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
Vd = 7 V
I
D
= 433 mA
Pdiss = 3.031 W
T
CH
O
( C)
R
T
JC
(qC/W)
T
M
(HRS)
R
θJC
Thermal Resistance
(Channel to Case)
111
13.5
3.8 E+7
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
O
Temperature @ 70 C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
TGA2508-EPU-SM
Preliminary Measured Data
Bias Conditions: Vd = 5 - 7 V, Id = 433 mA
32
30
28
26
24
Gain (dB)
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
5V
6V
7V
32
31
30
29
P1dB (dBm)
28
27
26
25
24
23
22
12
13
14
15
16
17
18
19
Frequency (GHz)
7V
6V
5V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 12, 2004
TGA2508-EPU-SM
Preliminary Measured Data
Bias Conditions: Vd = 5 - 7 V, Id = 433 mA
0
-5
-10
Input Return Loss (dB)
-15
6V
5V
-20
-25
-30
-35
-40
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
0
-5
-10
7V
7V
6V
Output Return Loss (dB)
-15
-20
-25
-30
5V
-35
-40
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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