CYStech Electronics Corp.
Small Signal Schottky diode
Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 1/3
RB751S-40C2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package.
Features
•Extremely
small surface mounting type.(SC-79/SOD523)
•Low
reverse current and low forward voltage
•High
reliability
Applications
Low current rectification and high speed switching
Symbol
RB751S-40C2
Outline
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature Tstg .................................................................................................... -45~+125°C
Junction Temperature Tj .............................................................................................................. +125°C
•
Maximum Voltages and Currents (Ta=25°C)
Peak Reverse Voltage V
RM
…………………………………………………………………………. 40 V
DC Reverse Voltage V
R
...................................................................................................................... 30 V
Mean Rectifying Current I
F
........................................................................................................... 30 mA
Peak Forward Surge Current I
FSM…………………………………..
……………………………………….200 mA
RB751S-40C2
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Characteristic
Forward Voltage
Reverse Leakage Current
Capacitance Between Terminals
Symbol
V
F
I
R
C
T
I
F
=1mA
V
R
=30V
V
R
=1V, f=1MHz
Condition
Min.
-
-
-
Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 2/3
Typ
-
-
2
Max.
370
0.5
-
Unit
mV
µA
pF
Characteristic Curves
Forward Current Derating Curve
120
Percentage of Rated Forward Current---(%)
100
80
60
40
20
0
0
25
50
75
100
125
150
0.01
0
0.1
0.2
0.3
0.4
0.5
Ambient Temperature---T
A
(℃)
100
Forward Current vs Forward Voltage
Forward Current---I
F
(mA)
M ounting on glass
epoxy PCBs
T yp.
pulse measurement
10
125℃
1
75℃
0.1
25℃
- 25℃
Forward Voltage---V
F
(V)
Reverse Leakage Current vs Reverse Voltage
100
Capacitance vs Reverse Voltage
10
Capacitance between terminals---C
T
(pF)
Reverse Leakage Current---IR(μA)
10
T a=
125℃
T a=
75℃
f=1MHz
Ta=25℃
1
0.1
T a=
25℃
0.01
Typ. pulse easurement
0.001
0
10
20
30
Reverse Voltage---VR(V)
Ta=-25℃
1
0
2
4
6
8
10
12
14
Reverse Voltage---V
R
(V)
RB751S-40C2
CYStek Product Specification
CYStech Electronics Corp.
SOD-523 Dimension
Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 3/3
Marking Code :
1
5
2
1
2
Style : Pin 1. Cathode 2. Anode
2-lead SOD-523 Plastic Package
CYStek Package Code : C2
*: Typical
DIM
A
b
p
c
D
Material:
Millimeters
Min
0.5
0.25
0.1
1.1
.Max.
0.7
0.35
0.2
1.3
DIM
E
H
E
V
Millimeters
Min.
0.7
1.5
0.15(typ)
Max.
0.9
1.7
Notes:
1.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
2.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
RB751S-40C2
CYStek Product Specification
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