CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTP5401A3
Description
•
The BTP5401A3 is designed for general purpose amplification.
•
Large I
C
, I
C( Max)
= -0.6A
•
High BV
CEO
, BV
CEO
= -150V
•
Complementary to BTN5551A3
.
Symbol
BTP5401A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
EBC
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limits
-160
-150
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP5401A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
h
FE
1
h
FE
2
h
FE
3
f
T
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
56
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
390
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-100µA
I
C
=-1mA
I
E
=-10µA
V
CB
=-120V
V
EB
=-3V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
V
CE
=-10V, I
C
=-10mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
K
56~120
P
82~180
Q
120~270
R
180~390
BTP5401A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
HFE@VCE=5V
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain---
HFE
100
100
10
0.1
1
10
100
Collector Current---IC(mA)
10
0.1
1
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1
Cutoff Frequency vs Collector Current
FT@VCE=12V
VBE(SAT)@IC=10IB
100
0.1
1
10
100
1000
Collector Current---IC(mA)
0.1
1
10
Collector Current---IC(mA)
100
Power Derating Curve
700
Power Dissipation---PD(mW)
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTP5401A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 4/4
A
B
1
2
3
α
2
Marking:
N5401
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP5401A3
CYStek Product Specification
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