CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C313A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 1/4
BTP8550A3
Description
The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
•
Large collector current , I
C
= -1.5A
•
Low V
CE(sat)
•
Complementary to BTN8050A3
.
Symbol
BTP8550A3
Outline
TO-92
B:Base
C:Collector
E:Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Pd
R
θJA
Tj
Tstg
Limits
-40
-25
-6
-1.5
-0.5
625
200
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTP8550A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0. 5
-1.2
-1
-
500
-
-
20
Unit
V
V
V
nA
nA
V
V
V
-
-
-
MHz
pF
Spec. No. : C313A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 2/4
Test Conditions
I
C
=-100µA
I
C
=-2mA
I
E
=-100µA
V
CB
=-35V
V
EB
=-6V
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
V
CE
=-10V, I
C
=-50mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
B
85~160
C
120~200
D
160~320
E
250~500
BTP8550A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE = 5V
Spec. No. : C313A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
100
VCE(SAT) @ IC=20IB
100
VCE = 2V
VCE = 1V
10
VCE(SAT) @ IC=10IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
VBE(SAT) @ IC=10IB
On Voltage vs Collector Current
10000
Saturation Voltage---(mV)
On Voltage---(mV)
VBE(ON) @ VCE=1V
1000
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
700
Power Dissipation---PD(mW)
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTP8550A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
α
2
Marking:
Spec. No. : C313A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 4/4
A
B
1
2
3
8550
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP8550A3
CYStek Product Specification