CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP953L3
Features
•
5 Amps continuous current, up to 10 Amps peak current
•
Very low saturation voltage
•
Excellent gain characteristics specified up to 10 Amps
•
Ptot=3Watts
•
Extremely low equivalent on resistance, R
CE(SAT)
=70m
Ω
at 4A
•
Pb-free package
Symbol
BTP953L3
Outline
SOT-223
C
E
B：Base
C：Collector
E：Emitter
C
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @T
A
=25°C
Operating and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Tj ; Tstg
Limits
-140
-100
-6
-5
-10
-1
3
(Note)
-55 ~ +150
Unit
V
V
V
A
A
A
W
°C
Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
BTP953L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C, unless otherwise specified)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*V
BE(on)
h
FE
1
h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
f
T
Cob
ton
toff
Min.
-140
-140
-100
-6
-
-
-
-
-
-
-
-
-
100
100
50
30
-
-
-
Typ.
-170
-170
-120
-8
-
-
-
-18
-85
-155
-280
-990
-910
200
200
90
50
15
125
65
110
460
Max.
-
-
-
-
-50
-50
-10
-50
-115
-220
-420
-1170
-1160
-
300
320
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
-
-
-
-
-
MHz
pF
ns
ns
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 2/6
Test Conditions
I
C
=-100µA
I
C
=-1µA, R
BE
≤
1k
Ω
I
C
=-10mA
I
E
=-100µA
V
CB
=-100V
V
CE
=-100V, R
BE
≤
1k
Ω
V
EB
=-5V
I
C
=-100mA, I
B
=-10mA
I
C
=-1A, I
B
=-100mA
I
C
=-2A, I
B
=-200mA
I
C
=-4A, I
B
=-400mA
I
C
=-4A, I
B
=-400mA
V
CE
=-1V, I
C
=-4A
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-3A
V
CE
=-1V, I
C
=-4A
V
CE
=-1V, I
C
=-10A
V
CE
=-10V, I
C
=-100mA, f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-2A, I
B
1=-200mA, I
B
2=200mA,
V
CC
=-10V
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Ordering Information
Device
BTP953L3
Package
SOT-223
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
953
BTP953L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
10000
VCE(SAT)
Saturation Voltage---(mV)
Current Gain---HFE
1000
IC=50IB
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 3/6
Saturation Voltage vs Collector Current
100
VCE=2V
100
VCE=1V
10
IC=10IB
IC=20IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Vottage vs Collector Current
10000
VBE(ON)@VCE=1V
1000
On Voltage---(mV)
1
10
100
1000
Collector Current---IC(mA)
10000
1000
100
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
3.5
3
Power Dissipation---PD(W)
2.5
2
1.5
1
0.5
0
0
50
100
150
Ambient Temperature---TA(℃)
200
BTP953L3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 4/6
BTP953L3
CYStek Product Specification
CYStech Electronics Corp.
Carrier Tape Dimension
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 5/6
BTP953L3
CYStek Product Specification
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