CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
BTNA44M3
Features
•
High breakdown voltage. (BV
CEO
= 400V)
•
Low saturation voltage, typically V
CE
(sat)
= 0.1V at I
C
/I
B
=10mA/1mA.
•
Complementary to BTPA94M3
Symbol
BTNA44M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limit
400
400
6
300
600
208
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTNA44M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
BE(sat)
h
FE
1
h
FE
2
*h
FE
3
*h
FE
4
f
T
Cob
Min.
400
400
6
-
-
-
-
-
-
40
52
45
40
20
-
Typ.
-
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.4
0.5
0.75
1.5
-
270
-
-
-
7
Unit
V
V
V
µA
µA
V
V
V
V
-
-
-
-
MHz
pF
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=400V, I
E
=0
V
EB
=6V,I
C
=0
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=20V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
K
52~120
P
82~180
Q
120~270
BTNA44M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=10V
Current Gain---
HFE
10000
Saturation Voltage-(mV)
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
VCESAT@IC=10IB
1000
100
100
10
0.1
1
10
100
1000
Collector Current ---IC(mA)
10
0.1
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage-(mV)
Power Dissipation---PD(mW)
700
600
Power Derating Curve
VBESAT@IC=10IB
500
400
300
200
100
0
1000
100
0.1
1
10
100
1000
Collector Current--- IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃ )
BTNA44M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 4/4
Marking:
1
2
C
3
44
H
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E
F
G
I
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA44M3
CYStek Product Specification
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
