CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
BTN5551N3
Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
•
High collector-emitter breakdown voltage. (BV
CEO
=160V @ I
C
=1mA)
•
Complement to BTP5401N3
Symbol
BTN5551N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
180
160
6
600
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTN5551N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
f
T
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
52
100
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2.
1
1
-
-
-
390
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=100µA
I
C
=1mA
I
E
=10µA
V
CB
=120V
V
EB
=4V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
V
CE
=6V, I
C
=2mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE4
Rank
Range
K
52~120
P
82~180
Q
120~270
R
180~390
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
HFE@VCE=6V
Current Gain---
HFE
1000
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
100
0.1
1
10
100
Collector Current--- IC(mA)
10
0.1
1
10
100
Collector Current ---IC(mA)
BTN5551N3
CYStek Product Specification
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
1000
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 3/4
Cutoff Frequency vs Collector Current
FT@VCE=12V
VBE(SAT)@IC=10IB
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
0.1
1
10
Collector Current---IC(mA)
100
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature - Ta(℃ )
BTN5551N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 4/4
A
L
3
B
1
2
S
Marking:
G1
TE
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
D
H
K
J
C
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN5551N3
CYStek Product Specification
微控制器 MCU
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