CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C231N3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTN6517N3
Features
•
High Breakdown Voltage:BVCEO≥350V
•
Complementary to BTP6520N3
Symbol
BTN6517N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current---continuous
Power Dissipation @TA=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
350
350
6
500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTN6517N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat) 1
VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
VBE(sat) 1
VBE(sat) 2
*VBE(sat) 3
VBE(on)
hFE 1
hFE 2
*hFE 3
*hFE 4
*hFE 5
fT
Cob
Min.
350
350
6
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.3
0.35
0.5
1.0
0.75
0.85
0.9
2
-
-
200
200
-
200
6
Unit
V
V
V
n
A
n
A
V
V
V
V
V
V
V
V
-
-
-
-
-
MHz
pF
Spec. No. : C231N3
Issued Date : 2003.04.12
Revised Date :
Page No. : 2/4
Test Conditions
IC=100
μ
A
IC=1mA
IE=10
μ
A
VCB=250V
VEB=5V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
VCE=10V, IC=100mA
VCE=10V, IC=1mA
VCE=10V,IC=10mA
VCE=10V,IC=30mA
VCE=10V,IC=50mA
VCE=10V,IC=100mA
VCE=20V, IC=10mA, f=20MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
BTN6517N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C231N3
Issued Date : 2003.04.12
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
100000
Ssturation Voltage---(mV)
VCE=10V
Current Gain---HFE
100
VCE(SAT)@IC=10IB
10000
1000
100
10
1
1
10
100
1000
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
250
Power Derating Curve
Power Dissipation---PD(mW)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
200
150
100
50
0
100
1
10
100
Collector Current---IC(mA)
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
BTN6517N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C231N3
Issued Date : 2003.04.12
Revised Date :
Page No. : 4/4
A
L
3
B
1
2
S
Marking:
TE
1Z
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN6517N3
CYStek Product Specification
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