CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C606J3
Issued Date :
2003.10.07
Revised Date :2004.04.12
Page No. : 1/4
BTN3501J3
•
Low V
CE
(sat)
•
High BV
CEO
•
Excellent current gain characteristics
Features
Symbol
BTN3501J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
2. When mounted on a PCB with the minimum pad size.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
80
80
6
8
16
(Note 1)
1.75
(Note 2)
20
71.4
(Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
BTN3501J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CEO(SUS)
I
CES
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
*h
FE
f
T
Cob
Min.
80
-
-
-
-
60
40
-
-
Typ.
-
-
-
0.3
1.0
-
-
50
130
Max.
-
10
50
0.6
1.5
-
-
-
-
Unit
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C606J3
Issued Date :
2003.10.07
Revised Date :2004.04.12
Page No. : 2/4
Test Conditions
I
C
=30mA, I
B
=0
V
CE
=80V, V
BE
=0
V
EB
=5V,I
C
=0
I
C
=8A, I
B
=0.4A
I
C
=8A, I
B
=0.8A
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=4A
V
CE
=6V, I
C
=500mA, f=20MHz
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Characteristic Curves
Grounded Emitter Output Characteristics
2500
Collector Current---IC(mA)
2000
1500
1000
500
0
0
2
4
Collector To Emitter Voltage---VCE(V)
6
Collector Current---IC(mA)
10mA
8mA
6mA
4mA
2mA
IB=0mA
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
15mA
10mA
5mA
IB=0mA
25mA
20mA
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
140
700
500uA
400uA
300uA
200uA
100uA
IB=0uA
0
1
2
3
4
5
6
Grounded Emitter Output Characteristics
2.5mA
Collector Current---IC(mA)
Collector Current---IC(mA)
120
100
80
60
40
20
0
600
500
400
300
200
100
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
2mA
1.5mA
1mA
500uA
Collector To Emitter Voltage---VCE(V)
BTN3501J3
CYStek Product Specification
CYStech Electronics Corp.
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE = 5V
Spec. No. : C606J3
Issued Date :
2003.10.07
Revised Date :2004.04.12
Page No. : 3/4
Saturation Voltage vs Collector Current
10000
V
CE(SAT)
1000
IC = 20IB
IC = 50IB
Current Gain---H
FE
100
VCE = 2V
VCE = 1V
100
IC = 10IB
10
1
10
100
1000
10000
Collector Current---I
C
(mA)
10
1
10
100
1000
10000
Collector Current---I
C
(mA)
Saturation Voltage vs Collector Current
10000
Power Dissipation---P
D
(W)
Saturation Voltage---(mV)
VCE(SAT) @ IC = 10IB
Power Derating Curve
2
1.75
1.5
1.25
1
0.75
0.5
0.25
1000
100
1
10
100
1000
10000
Collector Current---I
C
(mA)
0
0
50
100
150
200
Ambient Temperature---T
A
(℃)
Power Derating Curve
25
Power Dissipation---P
D
(W)
20
15
10
5
0
0
50
100
150
Case Temperature---T
C
(℃)
200
BTN3501J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
Spec. No. : C606J3
Issued Date :
2003.10.07
Revised Date :2004.04.12
Page No. : 4/4
A
C
Marking:
B
L
F
G
D
N3501
3
H
E
K
2
I
1
J
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
-
*0.0906
-
0.0354
-
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
-
*2.30
-
0.90
-
0.80
5.20
5.50
1.40
1.60
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN3501J3
CYStek Product Specification
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