CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 1/4
BTD965A3
Features
•
Low V
CE
(sat), Low V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386A3
Equivalent Circuit
BTD965A3
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC(cp)
Pd
Tj
Tstg
Limits
40
20
7
5
8
*1
0.75
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Note :
*1. Single Pulse Pw
≦
380us,Duty
≦
2%.
BTD965A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
20
7
-
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
Max.
-
-
0.1
1
0.1
1.0
800
-
-
50
Unit
V
V
uA
uA
uA
V
-
-
MHz
pF
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 2/4
Test Conditions
IC=1mA, IB=0
IE=10uA, IC=0
VCB=10V. IE=0
VCB=10V. IE=0
VEB=7V,IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=2V, IC=2.00A
VCE=6V, IE=50mA, f=200MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE1
Rank
Range
Q
230~380
R
340~600
S
400~800
BTD965A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
1000
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=30IB
Saturation Voltage-(mV)
HFE@VCE=2V
100
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
10000
Collector Current---IC(mA)
Cutoff Frequency vs Collector Current
Current Gain---
HFE
100
Power Derating Curve
1000
CutoffF Frequency---FT(MHZ)
Power Dissipation---PD(mW)
100
FT@VCE=6V
800
700
600
500
400
300
200
100
0
1
10
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
100
BTD965A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 4/4
A
B
1
2
3
α
2
Marking:
965
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD965A3
CYStek Product Specification
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