CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 1/4
BTD882SA3
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB772SA3
Symbol
BTD882SA3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350
µ
s,Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd
Tj
Tstg
Limit
60
50
5
3
(Note)
7
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTD882SA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
60
50
5
-
-
-
-
52
100
-
-
Typ.
-
-
-
-
-
0.25
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 2/4
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=50V. I
E
=0
V
EB
=3V,I
C
=0
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
V
CE
=5V, I
C
=0.1A, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
≤380
µ
s, Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
Q
100~200
P
160~320
E
250~500
BTD882SA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 3/4
Saturation voltage vs Collector current
1000
VCE(sat)
Saturation voltage---(mV)
Current gain---HFE
100
IC=40IB
100
VCE=2V
VCE=1V
10
IC=10IB
IC=20IB
10
1
10
100
1000
Collector current---IC(mA)
10000
1
1
10
100
1000
Collector current---IC(mA)
10000
Saturation votlage vs Collector current
10000
Power Dissipation---PD(mW)
VBE(sat)@IC=10IB
Power Derating Curve
800
700
600
500
400
300
200
100
0
0
50
100
150
200
Saturation voltage---(mV)
1000
100
1
10
100
1000
10000
Collector current---IC(mA)
Ambient Temperature --- Ta(℃ )
BTD882SA3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
α
2
Spec. No. : C848A3-H
Issued Date : 2003.05.31
Revised Date :2004.01.15
Page No. : 4/4
A
B
1
2
3
Marking:
D882S
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD882SA3
CYStek Product Specification
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