CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 1/4
BTD2195M3
Description
The BTD2195M3 is designed for use in general purpose amplifier and low speed switching
application.
Equivalent Circuit
BTD2195M3
B
C
Outline
SOT-89
E
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limits
130
120
5
4
6
(Note 1)
0.6
1
(Note 2)
2
(Note 3)
208
125
(Note 2)
62.5
(Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
R
θJA
Tj
Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
BTD2195M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CEO
BV
CBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
Cob
Min.
120
130
-
-
-
-
1000
500
-
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
1
2
2
1.2
2.8
-
-
200
Unit
V
V
mA
mA
mA
V
V
-
-
pF
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 2/4
Test Conditions
I
C
=1mA, I
B
=0
I
C
=100µA, I
E
=0
V
CB
=100V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=2A, I
B
=2mA
V
CE
=4V, I
C
=2A
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=2A
V
CB
=10V, I
E
=0A, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
BTD2195M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
10000
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 3/4
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
V
CE
= 4V
V
CE(SAT)
@I
C
=250I
B
Current Gain---H
FE
1000
100
1000
10
1
1
10
100
1000
10000
100
1
10
100
1000
10000
Collector Current---I
C
(mA)
Collector Current---I
C
(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
V
BE (SAT)
@I
C
= 250I
B
1000
On voltage---(mV)
10000
On voltage vs Collector Current
V
BE (ON)
@V
CE
= 4V
1000
100
10
1
10
100
1000
10000
Collector Current---I
C
(mA)
100
1
10
100
1000
10000
Collector Current---I
C
(mA)
Power Derating Curves
2.5
Power Dissipation---P
D
(W)
2
1.5
1
0.5
0
0
50
100
150
200
Ambient Temperature---T
A
(℃)
See Note 3 on page 1
See Note 2 on page 1
BTD2195M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 4/4
A
1
2
C
3
H
DP
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E
F
G
I
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2195M3
CYStek Product Specification
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