CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 1/4
BTD2098N3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386N3
Symbol
BTD2098N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limits
40
20
7
5
8
(Note )
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
20
7
-
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
Max.
-
-
0.1
1
0.1
1.0
800
-
-
50
Unit
V
V
µA
µA
µA
V
-
-
MHz
pF
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 2/4
Test Conditions
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=10V, I
E
=0
V
CB
=10V, I
E
=0
V
EB
=7V,I
C
=0
I
C
=3A, I
B
=0.1A
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=2.00A
V
CE
=6V, I
E
=50mA, f=200MHz
V
CB
=20V, I
E
=0A, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
1
Rank
Range
Q
230~380
R
340~600
S
400~800
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
1000
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=30IB
Saturation Voltage-(mV)
HFE@VCE=2V
100
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
100
Cutoff Frequency vs Collector Current
1000
CutoffF Frequency---FT(MHZ)
Power Dissipation---PD(mW)
FT@VCE=6V
250
200
150
100
50
0
1
10
Collector Current---IC(mA)
100
0
Power Derating Curve
100
50
100
150
200
Ambient Temperature---TA(℃)
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 4/4
A
L
3
B
1
2
S
Marking:
TE
AH
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2098N3
CYStek Product Specification
微控制器 MCU
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