CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848D3
Issued Date : 2004.07.06
Revised Date : 2005.04.20
Page No. : 1/4
BTD2150AD3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 200mA
•
Excellent current gain characteristics
•
Complementary to BTB1424AD3
•
Pb-free package
Symbol
BTD2150AD3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
EC B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
50
50
5
3
7
(Note)
1
10
150
-55~+150
Unit
V
V
V
A
W
°C
°C
BTD2150AD3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
50
50
5
-
-
-
-
100
180
100
-
-
Typ.
-
-
-
-
-
0.25
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
820
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Spec. No. : C848D3
Issued Date : 2004.07.06
Revised Date : 2005.04.20
Page No. : 2/4
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=2A, I
B
=200mA
I
C
=2A, I
B
=200mA
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
V
CE
=5V, I
C
=100mA, f =100MHz
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
R
180~390
S
270~560
T
390~820
Characteristic Curves
Grounded Emitter Output Characteristics
140
Collector Current---IC(mA)
Grounded Emitter Output Characteristics
700
2.5mA
2mA
1.5mA
1mA
500uA
IB=0uA
100
80
60
40
20
0
0
1
2
3
4
400uA
300uA
200uA
100uA
IB=0uA
Collector Current---IC(mA)
120
500uA
600
500
400
300
200
100
0
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
BTD2150AD3
CYStek Product Specification
CYStech Electronics Corp.
Grounded Emitter Output Characteristics
2500
Collector Current---IC(mA)
Spec. No. : C848D3
Issued Date : 2004.07.06
Revised Date : 2005.04.20
Page No. : 3/4
Grounded Emitter Output Characteristics
3500
10mA
8mA
25mA
20mA
15mA
10mA
2000
1500
1000
500
0
0
1
2
3
4
5
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
3000
2500
2000
1500
1000
500
0
6mA
4mA
2mA
IB=0mA
5mA
IB=0mA
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
1000
Saturation voltage---(mV)
Saturation voltage vs Collector current
1000
VCE(sat)
Current gain---HFE
VCE=5V
100
IC=40IB
100
VCE=2V
VCE=1V
10
IC=10IB
IC=20IB
10
1
10
100
1000
10000
Collector current---IC(mA)
1
1
10
100
1000
10000
Collector current---IC(mA)
Saturation votlage vs Collector current
10000
Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
1000
100
1
10
100
1000
10000
Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD2150AD3
CYStek Product Specification
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
Spec. No. : C848D3
Issued Date : 2004.07.06
Revised Date : 2005.04.20
Page No. : 4/4
D2150A
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
CYStek Package Code: D3
*: Typical
DIM
A
B
C
D
Φ
1
Φ
2
F
G
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1220
0.1299
0.1181
0.1260
0.0737
0.0837
0.0294
0.0494
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
3.10
3.30
3.00
3.20
1.87
2.12
0.74
1.25
DIM
H
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0462
0.0562
-
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
1.17
1.42
-
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2150AD3
CYStek Product Specification
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