CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 1/4
BTD2118J3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 4A / 0.1A
•
Excellent current gain characteristics
•
Complementary to BTB1412J3
Symbol
BTD2118J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(T
A
=25℃)
Power Dissipation(T
C
=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
50
20
6
5
10
1
10
150
-55~+150
Unit
V
V
V
*1
*2
A
W
°C
°C
Note : *1. Single Pulse , Pw≦380µs,Duty≦2%.
*2. When mounted on a 40*40*0.7mm ceramic board.
BTD2118J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
50
20
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.35
-
150
35
Max.
-
-
-
0.5
0.5
1
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 2/4
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=4A, I
B
=0.1A
V
CE
=2V, I
C
=0.5A
V
CE
=6V, I
C
=50mA, f=100MHz
V
CB
=20V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
Range
Q
120~270
R
180~390
S
270~560
BTD2118J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 3/4
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
Saturation Voltage-(mV)
1000
HFE@VCE=2V
Current Gain---
HFE
VCESAT@IC=20IB
100
10
100
1
10
100
1000
10000
Collector Current---IC(mA)
1
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage-(mV)
VCE(SAT)@IB=40IB
VBE(SAT)@IC=20IB
Saturation Voltage-(mV)
100
1000
10
1
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃ )
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
BTD2118J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
A
C
Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 4/4
Marking:
B
L
F
G
D
D2118
3
H
E
K
2
I
1
J
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
-
*0.0906
-
0.0354
-
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
-
*2.30
-
0.90
-
0.80
5.20
5.50
1.40
1.60
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2118J3
CYStek Product Specification
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