CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855A3-A
Issued Date : 2005.04.29
Revised Date :
Page No. : 1/4
BTD2057A3
Description
•
High BV
CEO
•
High current capability
•
Pb-free package
Symbol
BTD2057A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @T
A
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
200
200
5
1.5
3
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTD2057A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
h
FE
1
h
FE
2
f
T
Cob
Min.
200
200
5
-
-
-
0.45
82
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
1
1
0.6
0.8
390
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C855A3-A
Issued Date : 2005.04.29
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=50
µ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50
µ
A, I
C
=0
V
CB
=160V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=100mA
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=200mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=150mA
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification of h
FE
1
Rank
Range
P
82~180
Q
120~270
R
180~390
BTD2057A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Spec. No. : C855A3-A
Issued Date : 2005.04.29
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
100
Tj=75℃
Tj=25℃
100
Tj=125℃
Tj=75℃
Tj=25℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
Tj=25℃
On Voltage vs Collector Current
1000
Tj=25℃
Saturation Voltage---(mV)
Tj=125℃
Tj=75℃
On Voltage---(mV)
Tj=125℃
Tj=75℃
VBE(SAT)@IC=10IB
VBE(ON)@VCE=5V
100
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
0.8
Power Dissipation---PD(W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
100
150
Ambient Temperature---TA(℃)
200
BTD2057A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Marking:
Spec. No. : C855A3-A
Issued Date : 2005.04.29
Revised Date :
Page No. : 4/4
A
B
1
2
3
α
2
D2057
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2057A3
CYStek Product Specification
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