CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 1/4
BTD1864I3
Features
•
Low V
CE
(sat)
•
Excellent current gain characteristics
•
Complementary to BTB1243I3
Symbol
BTD1864I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B
B CCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note :
*1.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
80
80
50
6
5
7.5
1
15
150
-55~+150
Unit
V
V
V
V
*1
A
W
°C
°C
BTD1864I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
t
on
t
stg
t
f
Min.
80
80
50
6
-
-
-
-
-
100
180
100
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
400
15
35
300
20
Max.
-
-
-
-
1
1
135
240
1.2
-
820
-
-
-
-
-
-
Unit
V
V
V
V
µA
µA
mV
mV
V
-
-
-
MHz
pF
ns
ns
ns
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 2/4
Test Conditions
I
C
=10µA, I
E
=0
I
C
=100µA, R
BE
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=1A
V
CE
=10V, I
C
=500mA, f=100MHz
V
CB
=10V, f=1MHz
V
CC
=25V, I
C
=10I
B
1=-10I
B
2=1A,
R
L
=25Ω
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
R
180~390
S
270~560
T
390~820
BTD1864I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(V)
VCE=5V
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 3/4
Saturation Voltage vs Collector Current
1
Current Gain---HFE
0.1
VCESAT@IC=40IB
100
VCE=2V
VCE=1V
0.01
VCESAT@IC=10IB
VCESAT@IC=20IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
0.001
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10
Power Dissipation---PD(W)
Saturation Voltage---(V)
1.2
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
10000
0
Power Derating Curve
VBESAT@IC=20IB
1
VBESAT@IC=40IB
0.1
Collector Current---IC(mA)
50
100
150
200
Ambient Temperature---TA(℃)
Power Derating Curve
16
Power Dissipation---PD(W)
14
12
10
8
6
4
2
0
0
50
100
150
Case Temeprature---TC(℃)
200
BTD1864I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
D
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 4/4
Marking:
D1864
F
3
E
K
2
1
J
G
I
H
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2520
0.2677
0.2677
0.2835
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
-
-
*0.1811
-
0.0354
-
0.0315
0.2047
0.2165
Millimeters
Min.
Max.
6.50
-
-
*4.60
-
0.90
-
0.80
5.20
5.50
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1864I3
CYStek Product Specification
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