CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855I3
Issued Date : 2004.09.16
Revised Date :
Page No. : 1/4
BTD1857AI3
Description
•
High BV
CEO
•
High current capability
•
Complementary to BTB1236AI3
Symbol
BTD1857AI3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @T
A
=25℃
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
180
160
5
1.5
3
1
10
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
BTD1857AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
h
FE
1
h
FE
2
f
T
Cob
Min.
180
160
5
-
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
1
1
0.6
1.5
320
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C855I3
Issued Date : 2004.09.16
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=50
µ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50
µ
A, I
C
=0
V
CB
=160V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=100mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=150mA
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification of h
FE
1
Rank
Range
P
82~190
Q
120~200
R
180~320
BTD1857AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Spec. No. : C855I3
Issued Date : 2004.09.16
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Tj=75℃
Tj=25℃
Saturation Voltage---(mV)
Current Gain---HFE
100
Tj=125℃
Tj=75℃
Tj=25℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
Tj=25℃
On Voltage vs Collector Current
1000
Tj=25℃
Saturation Voltage---(mV)
Tj=125℃
Tj=75℃
On Voltage---(mV)
Tj=125℃
Tj=75℃
VBE(SAT)@IC=10IB
VBE(ON)@VCE=5V
100
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD1857AI3
Power Derating Curve
12
10
8
6
4
2
0
0
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification
Power Dissipation---PD(W)
CYStech Electronics Corp.
TO-251 Dimension
Spec. No. : C855I3
Issued Date : 2004.09.16
Revised Date :
Page No. : 4/4
A
B
C
D
Marking:
D1857A
F
3
E
K
2
1
J
G
I
H
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2520
0.2677
0.2677
0.2835
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
-
-
*0.1811
-
0.0354
-
0.0315
0.2047
0.2165
Millimeters
Min.
Max.
6.50
-
-
*4.60
-
0.90
-
0.80
5.20
5.50
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1857AI3
CYStek Product Specification
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