CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2005.07.26
Page No. : 1/ 4
BTD1805FP
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
•
Very low collector-to-emitter saturation voltage
•
Fast switching speed
•
High current gain characteristic
•
Large current capability
•
Pb-free package
Applications
•
CCFL drivers
•
Voltage regulators
•
Relay drivers
•
High efficiency low voltage switching applications
Symbol
BTD1805FP
Outline
TO-220FP
B：Base
C：Collector
E：Emitter
B C E
BTD1805FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage (I
E
=0)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2005.07.26
Page No. : 2/ 4
Limits
150
60
7
5
10
(Note 1)
2
2
40
62.5
3.125
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
t
on
t
stg
t
f
Min.
150
60
7
-
-
-
-
-
-
-
200
85
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
200
240
-
0.9
-
-
-
150
50
50
1.35
120
Max.
-
-
-
0.1
0.1
50
300
400
600
1.2
400
-
-
-
-
-
-
-
Unit
V
V
V
µA
µA
mV
mV
mV
mV
V
-
-
-
MHz
pF
ns
µs
ns
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
C
=100µA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=100mA, I
B
=5mA
I
C
=2A, I
B
=50mA
I
C
=3A, I
B
=150mA
I
C
=5A, I
B
=200mA
I
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=5A
V
CE
=2V, I
C
=10A
V
CE
=10V, I
C
=50mA
V
CB
=10V, f=1MHz
V
CC
=30V, I
C
=10I
B
1=-10I
B
2=1A,
R
L
=30
Ω
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
BTD1805FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
1000
Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2005.07.26
Page No. : 3/ 4
Saturation Voltage vs Collector Current
VCE=2V
Saturation Voltage---(mV)
Current Gain---HFE
100
VCESAT@IC=40IB
VCE=1V
VCESAT@IC=20IB
100
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
1000
On Voltage vs Collector Current
Saturation Voltage---(mV)
VBESAT@IC=20IB
On Voltage---(mV)
VBEON@VCE=1V
100
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
2.5
Power Dissipation---PD(W)
2
1.5
1
0.5
0
0
50
100
150
200
Ambient Temperature---TA(℃)
Power Derating Curve
45
Power Dissipation---PD(W)
40
35
30
25
20
15
10
5
0
0
50
100
150
200
Case Temeprature---TC(℃)
BTD1805FP
CYStek Product Specification
CYStech Electronics Corp.
TO-220FP Dimension
Marking:
Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2005.07.26
Page No. : 4/ 4
D1805
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
*: Typical
DIM
A
A1
A2
A3
b
b1
b2
c
Inches
Min.
Max.
0.169
0.185
0.051 REF
0.110
0.126
0.098
0.114
0.020
0.030
0.043
0.053
0.069
0.059
0.020
0.030
Millimeters
Min.
Max.
4.300
4.700
1.300 REF
2.800
3.200
2.500
2.900
0.500
0.750
1.100
1.350
1.750
1.500
0.500
0.750
DIM
D
E
e
F
Φ
L
L1
L2
Inches
Min.
Max.
0.408
0.392
0.583
0.598
0.100 TYP
0.106 REF
0.138 REF
1.102
1.118
0.067
0.075
0.075
0.083
Millimeters
Min.
Max.
10.360
9.960
14.800 15.200
2.540 TYP
2.700 REF
3.500 REF
28.000 28.400
1.700
1.900
1.900
2.100
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1805FP
CYStek Product Specification
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