CYStech Electronics Corp.
High Frequency NPN Epitaxial Planar Transistor
Spec. No. : C213N3
Issued Date : 2003.05.13
Revised Date :
Page No. : 1/3
BTC5177N3
Description
The BTC5177N3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification
application.
Symbol
Outline
BTC5177N3
SOT-23
B：Base
C：Collector
E：Emitter
Features
•
Low current consumption and high gain:
∣S
21e
∣²
= 12dB ( typ. ) at V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
∣S
21e
∣²
= 11dB ( typ. ) at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
•
Mini-mold package
Applications
•
Low noise and high gain amplifiers & Oscillator buffer amplifiers
Absolute Maximum Ratings
(T
A
=25℃)
Parameters
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
Pd
T
j
T
stg
Limits
3
5
2
10
150
150
-65~+150
Unit
V
V
V
mA
mW
°C
°C
BTC5177N3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
(T
A
=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Cutoff Frequency
Noise Figure
Insertion Gain |S
21e
|
2
in 50Ω system
Output Capacitance
Conditions
V
CB
=3V, I
E
=0
V
EB
=1V
V
CE
=2V, I
C
=7mA
(Note 1)
V
CE
=2V, I
C
=7mA, f =2GHz
V
CE
=1V, I
C
=5mA, f =2GHz
V
CE
=2V, I
C
=3mA, f =2GHz
V
CE
=1V, I
C
=3mA, f =2GHz
V
CE
=2V, I
C
=7mA, f =2GHz
V
CE
=1V, I
C
=5mA, f =2GHz
V
CB
=2V, IE=0, f = 1MHz
Symbol
I
CBO
I
EBO
h
FE
f
T
NF
|S
21e
|
2
Cob
Min
-
-
70
-
-
-
-
10
8.5
-
Spec. No. : C213N3
Issued Date : 2003.05.13
Revised Date :
Page No. : 2/3
Typ.
-
-
-
12
10
1.5
1.5
12
11
0.7
Max
100
100
140
15.5
13
2.0
2.0
-
-
1.0
Unit
nA
nA
-
GHz
GHz
dB
dB
dB
dB
pF
Note 1: Pulse test: Pulse width≤ 380µs, duty cycle≤ 2%.
BTC5177N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C213N3
Issued Date : 2003.05.13
Revised Date :
Page No. : 3/3
A
L
3
B
1
2
S
Marking:
TE
T1
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC5177N3
CYStek Product Specification
分立器件
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