CYStech Electronics Corp.
High Cutoff Frequency NPN Epitaxial Planar Transistor
Spec. No. : C212WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 1/8
BTC5096WC3
Description
The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and
CATV band.
Symbol
Outline
BTC5096WC3
SOT-523
B：Base
C：Collector
E：Emitter
Features
•
Low Noise and High Gain:
•
NF=1.4dB, TYP. @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
Ga=12dB, TYP. @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
∣S
21
∣²
=13.5dB @ V
CE
=5V, Ic =4.5mA, f=0.9GHz
Applications
•
Low noise and high gain amplifiers & Oscillator buffer amplifiers
•
Cordless Phone : LNA , MIX ,and OSC
•
Remote Controller
Absolute Maximum Ratings
•
Maximum Ratings (Ta=25°C)
Parameters
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
Pd
T
j
T
stg
Limits
10
18
2.5
20
100
125
-50~125
Unit
V
V
V
mA
mW
°C
°C
*1
Note: *1 Here we define the point DC current gain drops off.
BTC5096WC3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
•
Characterization Information (Ta=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Cutoff Frequency
Minimum Noise Figure
Associated Gain
Insertion Gain |S
21
|
2
In 50 Ohm system
Output Capacitance
Conditions
Symbol Min
V
CB
=3V, I
E
=0
I
CBO
-
V
EB
=1V
I
EBO
-
V
CE
=2V, I
C
=1mA
h
FE(1)
52
V
CE
=6V, I
C
=7mA
h
FE(2)
52
V
CE
=1V, I
C
=10mA
-
f
T
V
CE
=3V, I
C
=12mA
-
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
-
NF
min
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
-
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
-
G
A
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
-
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
-
|S
21
|
2
-
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
V
CB
=10V, I
E
=0, f = 0.9GHz
Cob
-
Spec. No. : C212WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 2/8
Typ. Max Unit
-
1
µA
-
1
µA
-
270
-
-
-
-
7.6
-
GHz
9
-
GHz
1.4
-
dB
1.6
-
dB
12
-
dB
13.5
-
dB
12.8
-
dB
13.5
-
dB
0.7
1.0
pF
Classification Of hFE(1)
Rank
Range
K
52~120
P
82~180
Q
120~270
S-Parameters
FREQ.
(GHz)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
BTC5096WC3
•
V
C
=2V, I
C
=4.2mA, I
B
=60µA
S11
Mag
0.604
0.524
0.454
0.399
0.355
0.320
0.291
0.268
0.249
0.237
0.225
0.221
0.218
0.216
0.220
0.223
0.229
Ang
-54.55
-68.94
-81.62
-92.38
-102.51
-111.90
-121.04
-129.71
-138.30
-147.20
-155.29
-163.42
-171.96
-179.45
173.74
166.14
160.61
Mag
7.842
7.093
6.422
5.768
5.226
4.756
4.367
4.011
3.717
3.490
3.229
3.049
2.880
2.708
2.568
2.465
2.311
S21
Ang
133.59
123.62
114.96
107.71
101.24
95.56
90.53
85.55
81.44
77.18
73.05
69.95
65.80
62.11
59.78
55.42
52.89
Mag
0.067
0.077
0.084
0.090
0.096
0.101
0.107
0.113
0.118
0.125
0.131
0.137
0.144
0.151
0.158
0.167
0.173
S12
Ang
51.54
48.20
46.25
45.71
45.45
45.48
46.55
46.59
47.32
48.06
48.45
48.55
49.30
49.54
49.59
49.92
49.56
Mag
0.669
0.583
0.518
0.468
0.431
0.400
0.380
0.364
0.348
0.339
0.330
0.324
0.318
0.314
0.309
0.310
0.305
S22
Ang
-35.46
-39.37
-41.88
-43.32
-44.21
-44.69
-44.62
-45.20
-45.38
-45.42
-46.12
-46.58
-47.16
-48.21
-48.87
-49.95
-51.14
CYStek Product Specification
CYStech Electronics Corp.
TT=0.0 (Sec)
EG=1.11 (eV)
IBV=1.0E-3(A)
Spec. No. : C212WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 5/8
•
Other Parasitic Parameters
R
EX
=0.0 (Ohm)
R
SS
=10.0 (Ohm)
R
BX
=0.0 (Ohm)
R
SC
=250.0 (Ohm)
R
CX
=0.0 (Ohm)
C
SP
=20.89 (fF)
R
SX
=5.0 (Ohm)
C
SC
=41.79 (fF)
R
SP
=450.0 (Ohm)
C1=70 (fF)
C2=150 (fF)
C3=80 (fF)
Le=0.6 (nH)
Lb=0.85 (nH)
Lc=0 (nH)
L1=0.5 (nH)
L2=0.5 (nH)
L3=0.6 (nH)
Transistor Chip Equivalent Circuit
C’
B’
R
BX
E
R
EX
0.1nH
R
SS
R
SX
G-P
R
sp
C
SP
C
Package Equivalent Circuit
C
3
L
1
S’
L
b
C
1
C
Transistor S
Chip
B
E
L
e
L
C
L
2
Collector
C2
B
R
SC
Base
C
SC
L
3
Emitter
BTC5096WC3
CYStek Product Specification
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