CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 1/4
BTC4081S3
Description
•
The BTC4081S3 is designed for using in driver stage of AF amplifier and general purpose
amplification.
•
Low Cob. Typ. Cob=2.0pF
•
Complementary to BTA1576S3
.
Equivalent Circuit
BTC4081S3
SOT-323
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
60
50
7
150
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTC4081S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
60
50
7
-
-
-
120
80
-
Typ.
-
-
-
-
-
0.2
-
180
2
Max.
-
-
-
0.1
0.1
0.4
820
-
3.5
Unit
V
V
V
uA
uA
V
MHz
pF
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 2/4
Test Conditions
IC=100uA
IC=1mA
IE=50uA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
Q
120-270
R
180-390
S
270-560
T
410-820
BTC4081S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage-(mV)
1000
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 3/4
Saturation Voltage vs Collector Current
Current Gain---
HFE
VCE(SAT)@IC=10IB
100
100
0.1
1
10
100
1000
Collector Current--- IC(mA)
10
0.1
1
10
100
1000
Collector Current--- IC(mA)
Saturation Voltage vs Collector Current
1000
Cutoff Frequency---FT(GHZ)
1
Cutoff Frequency vs Collector Current
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
FT@VCE=12V
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
0.1
1
10
Collector Current---IC(mA)
100
PD - Ta
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTC4081S3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 4/4
3
A
Marking:
A1
Q
Lp
detail Z
W
B
C
1
e1
e
D
bp
2
TE
1F
E
A
Z
θ
He
0
1
scale
2 mm
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
v
A
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM
A
A1
bp
C
D
E
e
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
-
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
-
0.0079
-
-
-
Millimeters
Min.
Max.
0.65
-
2.00
2.25
0.15
0.45
0.13
0.23
0.2
-
0.2
-
10°
0°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4081S3
CYStek Product Specification