CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C204A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 1/4
BTC1815A3
Description
The BTC1815A3 is designed for use in driver stage of AF amplifier and low speed switching.
Features
•
High voltage and high current : V
CEO
=50V(min), I
C
=150mA(max)
•
High H
FE
and excellent linearity
•
Complementary to BTA1015A3
Symbol
BTC1815A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @Ta=25℃
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTC1815A3
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Pd
R
θJA
Tj
Tstg
Limits
60
50
5
150
50
400
250
125
-55~+125
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
h
FE
1
h
FE
2
f
T
Cob
Min.
60
50
5
-
-
-
70
25
80
-
Typ.
-
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
100
100
0.25
1.0
700
-
-
3.5
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Spec. No. : C204A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=100µA
I
C
=1mA
I
E
=10µA
V
CB
=60V
V
EB
=5V
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0,f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification of h
FE
1
Rank
Range
O
70~140
Y
120~240
GR
200~400
BL
350~700
BTC1815A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=6V
Spec. No. : C204A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
100
0.1
1
10
100
Collector Current --- IC(mA)
1000
Current Gain---
HFE
100
10
0.1
1
10
100
1000
Collector Current --- IC(mA)
Saturation Voltage vs Collector Current
1000
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=10IB
FT@VCE=12V
100
0.1
1
10
100
Collector Current --- IC(mA)
1000
0.1
1
10
Collector Current --- IC(mA)
100
Power Derating Curve
450
Power Dissipation---PD(mW)
400
350
300
250
200
150
100
50
0
0
50
100
150
Ambient Temperature ---Ta(℃ )
BTC1815A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
α
2
Marking:
Spec. No. : C204A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 4/4
A
B
1
2
3
C1815
α
3
C
D
H
I
E
F
G
α
1
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC1815A3
CYStek Product Specification
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