CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
Page No. : 1/4
BTB1236AM3
Description
•
High BV
CEO
•
High current capability
Symbol
BTB1236AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Limits
-180
-160
-5
-1.5
-3
0.6
1
2
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
(Note 1)
(Note 2)
(Note 3)
Thermal Resistance, Junction to Ambient
R
θJA
208
125
(Note 2)
62.5
(Note 3)
Junction Temperature
Storage Temperature
Note :
1. Single Pulse Pw≦350µs, Duty≦2%.
Tj
Tstg
150
-55~+150
2.
When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3
.
When mounted on ceramic with area measuring 40×40×1 mm
BTB1236AM3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
h
FE
1
h
FE
2
f
T
Cob
Min.
-180
-160
-5
-
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-1
-1
-0.6
-1.5
200
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-50
µ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50
µ
A, I
C
=0
V
CB
=-160V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-1A, I
B
=-100mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-150mA
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification of h
FE
1
Rank
Range
K
60~120
P
82~190
Q
120~200
BTB1236AM3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Saturation Voltage-(mV)
1
10
100
1000
10000
Current Gain---
HFE
100
10
1
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
10000
On Voltage vs Collector Current
10000
Power Derating Curve
2.5
Power Dissipation---PD(W)
VBE(ON)@VCE=5V
2
1.5
1
0.5
0
See Note 3 on page 1
See Note 2 on page 1
On Voltage---(mV)
1000
100
1
10
100
1000
10000
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
BTB1236AM3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
Page No. : 4/4
Marking:
1
2
C
3
H
AV2
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E
F
G
I
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1236AM3
CYStek Product Specification
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