CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 1/5
BTB1424AM3
Features
•
Excellent DC current gain characteristics
•
Low Saturation Voltage, V
CE(sat)
=-0.3V(typ) @I
C
=-2A, I
B
=-100mA.
•
Complementary to BTD2150AM3
•
Pb-free package
Symbol
BTB1424AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
(
Note 1)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
-50
-50
-6
-3
-5
600
150
-55~+150
Unit
V
V
V
A
mW
°C
°C
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
BTB1424AM3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-50
-50
-6
-
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
-
240
35
Max.
-
-
-
-0.1
-0.1
-0.4
-0.5
560
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 2/5
Test Conditions
I
C
=-50µA
I
C
=-1mA
I
E
=-50µA
V
CB
=-20V
V
EB
=-5V
I
C
=-1A, I
B
=-50mA
I
C
=-2A, I
B
=-100mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-500mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
h
FE
range
P
82~180
Q
120~270
R
180~390
S
270~560
Ordering Information
Device
BTB1424AM3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
AE
BTB1424AM3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 3/5
C-E saturation voltage vs Collector current
C-E saturation voltage---VCE(SAT)(mV)
10000
Current gain---HFE
1000
100
VCE=2V
100
IC=40IB
VCE=1V
10
IC=10IB
1
1
10
100
1000
10000
Collector current---IC(mA)
IC=20IB
10
1
10
100
1000
10000
Collector current---IC(mA)
B-E saturation voltage vs Collector current
10000
B-E saturation---VBE(SAT)(mV)
Power Dissipation---PD(mW)
700
600
500
400
300
200
100
0
Power Derating Curve
IC=10IB
1000
100
1
10
100
1000
10000
Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTB1424AM3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 4/5
Carrier Tape Dimension
BTB1424AM3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C817M3A
Issued Date : 2003.10.05
Revised Date :2005.10.04
Page No. : 5/5
Marking:
1
2
C
3
H
AE*
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E
F
G
I
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424AM3
CYStek Product Specification
嵌入式系统
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