CYStech Electronics Corp.
Small Signal Schottky diode
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 1/4
BAT54S2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-323 very small plastic SMD package.
Features
•Guard
ring protected
•Low
forward voltage drop
•Very
small plastic SMD package
Applications
•Ultra
high-speed switching
•Voltage
clamping
•Protection
circuits
•Blocking
diodes
Symbol
Outline
SOD-323
BAT54S2
BAT54S2
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
Symbol
V
R
I
F
I
FRM
I
FSM
Ptot
Tstg
Tj
Tamb
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Conditions
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 2/4
tp≤1s,
δ≤0.5
tp<10ms
Tamb≤25℃
Min
-
-
-
-
-
-65
-
-65
Max
30
200
300
600
200
+150
125
+125
Unit
V
mA
mA
mA
mW
℃
℃
℃
Characteristics
(Ta=25°C, unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Symbol
V
BR
V
F
(1)
V
F
(2)
Forward Voltage (
Note 1
)
V
F
(3)
V
F
(4)
V
F
(5)
Reverse Leakage Current (
Note 2
)
Diode Capacitance
Reverse Recovery Time
I
R
C
D
trr
I
R
=100µA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1V, f=1MHz
when switched from I
F
= 10mA
to I
R
=10mA; R
L
=100Ω;
measured at I
R
=1mA
Condition
Min.
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
800
2
10
5
Unit
V
mV
mV
mV
mV
mV
µA
pF
ns
Notes
:
1.pulse test, tp=380µs, duty cycle<2%.
2.pulse test, tp=300µs, duty cycle<2%.
Thermal Characteristics
Symbol
R
th j-a
Parameter
thermal resistance from junction to ambient
Conditions
note 1
Value
635
Unit
K/W
Note 1 : Device mounted on a FR-4 PCB
BAT54S2
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current & Forward Voltage
250
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 3/4
100
Diode Capacitance & Reverse-Biased Voltage
200
150
Diode Capacitance-Cd (pF)
0
200
400
600
800
1000
Forward Current-I
F
(mA)
10
100
50
0
1
Forward Voltage-V
F
(mV)
0.1
1
10
100
Reverse Biased Voltage-V
R
(V)
BAT54S2
CYStek Product Specification
CYStech Electronics Corp.
SOD-323 Dimension
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 4/4
Marking:
K
A
1
2
5H
JV
B
D
Style: Pin 1.Cathode 2.Anode
2-Lead SOD-323 Plastic Surface
Mounted Package,
CYStek Package Code: S2
H
J
E
C
*: Typical
DIM
A
B
C
D
Inches
Min.
Max.
0.0630 0.0709
0.0453 0.0531
0.0315 0.0394
0.0098 0.0157
Millimeters
Min.
Max.
1.60
1.80
1.15
1.35
0.80
1.00
0.25
0.40
DIM
E
H
J
K
Inches
Min.
Max.
0.0060 REF
0.0000 0.0040
0.0035 0.0070
0.0906 0.1063
Millimeters
Min.
Max.
0.15 REF
0.00
0.10
0.089
0.177
2.30
2.70
Notes:
1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local
CYStek
sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAT54S2
CYStek Product Specification
PCB设计
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