CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C816I3
Issued Date : 2003.07.03
Revised Date :
Page No. : 1/4
BTB1326I3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.6 V (typical), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTD2097I3
Symbol
BTB1326I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-20
-15
-6
-5
-10
1
10
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTB1326I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-20
-15
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-0.5
-0.5
-1.0
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Spec. No. : C816I3
Issued Date : 2003.07.03
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-4A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
V
CE
=-6V, I
C
=-50mA, f=30MHz
V
CB
=-20V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
Range
Q
120~270
R
180~390
S
270~560
BTB1326I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---VCE(SAT)(mV)
1000
Spec. No. : C816I3
Issued Date : 2003.07.03
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
VCE=5V
Current Gain---HFE
100
IC=40IB
10
IC=20IB
IC=10IB
1
1
10
100
1000
10000
100
VCE=2V
VCE=1V
10
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---VBE(SAT)(mV)
12
10
8
6
4
2
Power Derating Curve
IC=10IB
1000
Power Dissipation---PD(W)
100
1
10
100
1000
10000
0
0
50
100
150
200
Collector Current---IC(mA)
Case Temperature---TC(℃ )
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃ )
BTB1326I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
D
Spec. No. : C816I3
Issued Date : 2003.07.03
Revised Date :
Page No. : 4/4
Marking:
B1326
F
3
E
K
2
1
J
G
I
H
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2520
0.2677
0.2677
0.2835
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
-
-
*0.1811
-
0.0354
-
0.0315
0.2047
0.2165
Millimeters
Min.
Max.
6.50
-
-
*4.60
-
0.90
-
0.80
5.20
5.50
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1326I3
CYStek Product Specification
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
