CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C656E3
Issued Date : 2004.06.03
Revised Date :
Page No. : 1/4
BTA1210E3
Description
The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
speed switching application.
Features
•
High BV
CEO
•
High DC current gain
•
High current capability
•
Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit
BTA1210E3
C
B
Outline
TO-220AB
E
B：Base
C：Collector
E：Emitter
BCE
BTA1210E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Spec. No. : C656E3
Issued Date : 2004.06.03
Revised Date :
Page No. : 2/4
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
R
θJA
R
θJC
Tj
Tstg
Limits
-120
-120
-5
-10
-15
(Note )
2
65
62.5
1.92
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
Characteristics
(Ta=25°C)
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
Cob
Min.
-120
-120
-5
-
-
-
-
-
-
1
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-200
-200
-2
-2
-4
-4.5
-2.8
12
-
300
Unit
V
V
V
µA
µA
mA
V
V
V
V
K
-
pF
Test Conditions
I
C
=-1mA, I
B
=0
I
C
=-100µA, I
E
=0
I
E
=-1mA, I
C
=0
V
CB
=-120V, I
E
=0
V
CE
=-120V, I
B
=0
V
EB
=-5V, I
C
=0
I
C
=-4A, I
B
=-16mA
I
C
=-8A, I
B
=-80mA
I
C
=-8A, I
B
=-80mA
V
CE
=-4V, I
C
=-4A
V
CE
=-4V, I
C
=-4A
V
CE
=-4V, I
C
=-8A
V
CB
=-10V, I
E
=0A, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
BTA1210E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
10000
VCE=3V
Spec. No. : C656E3
Issued Date : 2004.06.03
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
10
VCESAT@IC=250IB
Current Gain---
HFE
1000
100
Saturation Voltage---(V)
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
1
0.1
100
1000
Collector Current---IC(mA)
10000
On voltage vs Collector Current
10
Power Dissipation---P
D
(W)
VBEON@VCE=3V
Power Derating Curve
2.5
2
1.5
1
0.5
0
On Voltage---(V)
1
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
0
50
100
150
Ambient Temperature---T
A
(℃)
200
Power Derating Curve
70
Power Dissipation---PD(W)
60
50
40
30
20
10
0
0
50
100
150
200
Case Temperature---TC(℃)
BTA1210E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Spec. No. : C656E3
Issued Date : 2004.06.03
Revised Date :
Page No. : 4/4
A
D
B
E
C
Marking:
A1210
H
I
G
4
P
M
3
2
1
N
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
K
O
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
*: Typical
DIM
A
B
C
D
E
G
H
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
-
*
0.6398
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
-
*
16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
-
*
0.1508
0.0295 0.0374
0.0449 0.0551
-
*
0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
-
*
3.83
0.75
0.95
1.14
1.40
-
*
2.54
12.70
14.27
14.48
15.87
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1210E3
CYStek Product Specification
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
