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JANTXV2N3735L

产品描述Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
产品类别分立半导体    晶体管   
文件大小186KB,共18页
制造商Raytheon Company
官网地址https://www.raytheon.com/
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JANTXV2N3735L概述

Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

JANTXV2N3735L规格参数

参数名称属性值
Objectid1494194513
包装说明TO-39, 3 PIN
Reach Compliance Codeunknown
ECCN代码EAR99
YTEOL0

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The documentation and process conversion measures
necessary to comply with this document shall be
completed by 6 March 2007.
INCH-POUND
MIL-PRF-19500/395J
6 December 2007
SUPERSEDING
MIL-PRF-19500/395H
27 October 2006
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,
TYPES 2N3735, 2N3735L, 2N3737, AND 2N3737UB, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of
product assurance are provided for unencapsulated devices.
*
*
1.2 Physical dimensions. See figure 1 (TO-39 and TO-5), figure 2 (TO-46), and figure 3 (2N3737UB).
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C.
Type
P
T
T
A
= +25°C
W
P
T
T
C
=+25°C
W
2.9 (2)
1.9 (4)
N/A
V
CBO
V dc
75
P
T
T
SP
=+25°C
W
N/A
N/A
1.9 (4)
V
CEO
V dc
40
R
θ
JA
°C/W
175
350
325 (6)
R
θ
JC
°C/W
60
88
N/A
V
EBO
V dc
5
R
θ
JSP
°C/mW
N/A
N/A
88 (6)
I
C
A dc
1.5
T
J
and
T
STG
°C
-65 to +200
-65 to +200
-65 to +200
2N3735, 2N3735L
2N3737
2N3737UB
Types
1.0 (1)
0.5 (3)
0.5 (5)
2N3735, 2N3735L, 2N3737, 2N3737UB
(1)
(2)
(3)
(4)
(5)
(6)
Derate linearly at 5.71 mW/°C above T
A
= +25°C.
Derate linearly at 16.6 mW/°C above T
C
= +25°C.
Derate linearly at 2.86 mW/°C above T
A
= +25°C.
Derate linearly at 11.3 mW/°C above T
C
= +32.8°C.
Derate linearly at 3.07 mW/°C above T
A
= +37.5°C.
T
A
= +55°C for UB on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1 - layer 1 Oz Cu,
horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.22 mm), R
θJA
with a defined thermal
resistance condition included is measured at P
T
= 500 mW.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil/.
AMSC N/A
FSC 5961

JANTXV2N3735L相似产品对比

JANTXV2N3735L WBDDSS8-A-04-1804-G-G
描述 Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN Array/Network Resistor, Isolated, 0.1W, 1800000ohm, 100V, 2% +/-Tol, -300,300ppm/Cel, 1408,
Objectid 1494194513 819509312
Reach Compliance Code unknown compliant
ECCN代码 EAR99 EAR99

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