The documentation and process conversion
measures necessary to comply with this document
shall be completed by 20 May 2005.
INCH-POUND
MIL-PRF-19500/253J
20 February 2005
SUPERSEDING
MIL-PRF-19500/253H
25 March 2002
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
TYPES 2N930 AND 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
MIL-PRF-19500/253H is inactive for new design after 3 June 2004. For new design use MIL-PRF-19500/376.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an NPN, silicon, low-power transistors.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of
product assurance are provided for each unencapsulated device.
1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (UB, surface mount), and figures 3 and 4 (die).
*
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C.
V
CBO
V dc
60
Types
I
C
mA dc
30
P
T
(1)
T
SP
= +25°C
mW
N/A
360
R
θJA
(2)
°C/W
485
325
T
J
and T
STG
°C
-65 to +200
R
θJC
(2)
°C/W
150
N/A
R
θJSP(IS)
(2)
°C/W
N/A
95
V
CEO
V dc
45
P
T
(1)
T
A
= +25°C
mW
V
EBO
V dc
6
P
T
(1)
T
C
= +25°C
mW
360
N/A
2N930
2N930UB
360
N/A
(1) For derating, see figures 5, 6, 7, and 8.
(2) For thermal impedance curves see figures 9, 10, and 11.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
AMSC N/A
FSC 5961
MIL-PRF-19500/253J
1.4 Primary electrical characteristics.
Limits
V
BE(SAT)
(1)
V
CE(SAT)
(1)
h
FE1
(1)
h
FE2
(1)
C
obo
|h
fe
|
V
CE
= 5 V dc
I
C
= 10 µA dc
V
CE
= 5 V dc
I
C
= 500 µA dc
100 kHz
≤
f
≤
1 MHz
pF
V
CB
= 5 V dc
I
E
= 0
V
CE
= 5 V dc
I
C
= 500 µA dc
f = 30 MHz
I
C
= 10 mA dc
I
B
= 0.5 mA dc
I
C
= 10 mA dc
I
B
= 0.5 mA dc
V dc
1.5
6.0
0.6
1.0
V dc
Min
Max
100
300
150
8.0
1.0
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, and 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, and 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/253J
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500
.750
12.70
19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Note
6
7,8
7,8
7,8
7,8
7,8
5
3,4
3
10
6
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be
within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC)
relative to tab at MMC. The device may be measured by direct methods.
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum.
Diameter is uncontrolled in L
1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with AMSE Y14.5M, diameters are equivalent to
φx
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-18).
3
MIL-PRF-19500/253J
Dimensions
Symbol
BH
BL
BW
CL
CW
LL1
LL2
LS1
LS2
LW
r
r1
r2
Min
.046
.115
.085
Inches
Max
.056
.128
.108
.128
.108
.038
.035
.040
.079
.024
.008
.012
.022
Millimeters
Min
Max
1.17
1.42
2.92
3.25
2.16
2.74
3.25
2.74
0.56
0.96
0.43
0.89
0.91
1.02
1.81
2.01
0.41
0.61
.203
.305
.559
Note
.022
.017
.036
.071
.016
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions, surface mount (UB version).
4
MIL-PRF-19500/253J
A- version
NOTES:
1. Chip size
15 x 19 mils
±1
mil. (381 X 483
±25.4
mm)
2. Chip thickness
10
±1.5
mil. (254
±38
mm).
3. Top metal ............................................... Aluminum 15,000Å minimum, 18,000Å nominal.
4. Back metal.............................................. A. Gold 2,500Å minimum, 3,000Å nominal.
B. Eutectic Mount – No Gold.
5. Backside
Collector.
6. Bonding pad
B = 3 mils, E = 4 mils diameter.
7. Passivation
Si
3
N
4
(Silicon Nitride) 2 kÅ min, 2.2 kÅ nom.
FIGURE 3. Physical dimensions, JANHCA die.
5
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